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ZHCSEC3D October 2015 – November 2022 DP83867CS , DP83867E , DP83867IS

PRODUCTION DATA

7.5 Electrical Characteristics

The electrical ratings specified in this section apply to all specifications in this document, unless otherwise noted. These specifications are interpreted as conditions that do not degrade the device parametric or functional specifications for the life of the product containing it.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
3.3-V V_DDIO
V_OH	High level output voltage	I_OH = –4 mA	2			V
V_OL	Low level output voltage	I_OL = 4 mA			0.6	V
V_IH	High level input voltage		1.7			V
V_IL	Low level input voltage				0.7	V
2.5-V V_VDDIO
V_OH	High level output voltage	I_OH = –4 mA	V_DDIO × 0.8			V
V_OL	Low level output voltage	I_OL = 4 mA			0.6	V
V_IH	High level input voltage		1.7			V
V_IL	Low level input voltage				0.7	V
1.8-V V_DDIO
V_OH	High level output voltage	I_OH = –1 mA	V_DDIO – 0.2			V
V_OL	Low level output voltage	I_OL = 1 mA			0.2	V
V_IH	High level input voltage		0.7 × V_DDIO			V
V_IL	Low level input voltage				0.2 × VDDIO	V
XI INPUT VOLTAGE
V_OSC	Input voltage for 25 MHz Oscillator		1.5		1.9	Vpp
V_IH	High level input voltage		1.4			V
V_IL	Low level input voltage				0.45	V
DC CHARACTERISTICS
I_IH	Input high current	VIN = VDD, T_A = –40°C to +85°C	-10		10	µA
I_IH	Input high current	VIN = VDD, T_A = 85°C to +105°C	-20		20	µA
I_IL	Input low current	VIN = GND, T_A = –40°C to +85°C	-10		10	µA
I_IL	Input low current	VIN = GND, T_A = 85°C to +105°C	-20		20	µA
I_OZ	TRI-STATE output current	VOUT = VDD, VOUT = GND, T_A = –40°C to +85°C	-10		10	µA
I_OZ	TRI-STATE output current	VOUT = VDD, VOUT = GND, T_A = 85°C to +105°C	-20		20	µA
C_IN	Input capacitance	See ⁽³⁾			5	pF
PMD OUTPUTS
V_OD-10	MDI	ERGZ/ISRGZ	1.54	1.75	1.96	V Peak Differential
V_OD-10	MDI	CSRGZ		1.75		V Peak Differential
V_OD-100	MDI	ERGZ/ISRGZ	0.95	1	1.05	V Peak Differential
V_OD-100	MDI	CSRGZ		1		V Peak Differential
V_OD-1000	MDI	ERGZ/ISRGZ	0.67	0.745	0.82	V Peak Differential
V_OD-1000	MDI	CSRGZ		0.745		V Peak Differential
POWER CONSUMPTION
P1000	RGMII power consumption⁽¹⁾⁽²⁾⁽⁴⁾	2 supplies		495		mW
P1000	RGMII power consumption⁽¹⁾⁽²⁾⁽⁴⁾	Optional 3rd supply		457		mW
IDD25	Supply current	2 supplies		137		mA
IDD10				108		mA
IDDIO (1.8 V)				24		mA
IDD25	Supply current	Optional 3rd supply		86		mA
IDD10				108		mA
IDD18				50		mA
IDDIO (1.8 V)				24		mA

(1) Power consumption represents total operational power for 1000BASE-T.

(2) See Section 10 for details on 2-supply and 3-supply configuration.

(3) Ensured by production test, characterization, or design.

(4) For detailed information about DP83867 power consumption for specific supplies under a wide set of conditions, see the DP83867E/IS/CS/IR/CR RGZ Power Consumption Data application report (SNLA241).