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ZHCSEQ3D February 2016 – December 2022 LM5165

PRODUCTION DATA

6.5 Electrical Characteristics

Typical values correspond to T_J = 25°C. Minimum and maximum limits apply over the –40°C to +125°C junction temperature range. V_IN = 12 V (unless otherwise noted).⁽¹⁾⁽²⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
QUIESCENT CURRENTS
I_Q-SHD	VIN DC supply current, shutdown	V_EN = 0 V, T_A = 25°C		4.6	6	µA
I_Q-SLEEP	VIN DC supply current, no load	V_FB = 1.5 V, T_A = 25°C		10.5	15	µA
I_{Q-SLEEP-VINMAX}	VIN DC supply current, no load	V_FB = 1.5 V, V_VIN = 65 V, T_A = 25°C		11	15	µA
I_Q-ACTIVE-PFM	VIN DC supply current, active	PFM mode		205		µA
I_Q-ACTIVE-COT	VIN DC supply current, active	COT mode, R_RT = 107 kΩ		300		µA
POWER SWITCHES
R_DSON1	High-side MOSFET R_DS(on)	I_SW = –10 mA		2		Ω
R_DSON2	Low-side MOSFET R_DS(on)	I_SW = 10 mA		1		Ω
CURRENT LIMITING
I_LIM1-VSON	High-side peak current threshold VSON-10 package	ILIM shorted to GND	220	240	264	mA
I_LIM2-VSON		R_ILIM = 24.9 kΩ	155	180	205
I_LIM3-VSON		R_ILIM = 56.2 kΩ	100	120	145
I_LIM4-VSON		R_ILIM ≥ 100 kΩ	48	60	75
REGULATION COMPARATOR
V_VOUT50	VOUT 5-V DC setpoint	LM5165X	4.9	5	5.1	V
V_VOUT33	VOUT 3.3-V DC setpoint	LM5165Y	3.23	3.3	3.37	V
I_VOUT	VOUT pin input current	V_VOUT = 5 V, LM5165X		6.7		µA
I_VOUT	VOUT pin input current	V_VOUT = 3.3 V, LM5165Y		3.9		µA
V_REF1	Lower FB regulation threshold (PFM, COT)	Adjustable output version	1.205	1.223	1.241	V
V_REF2	Upper FB regulation threshold (PFM)	Adjustable output version	1.22	1.233	1.246	V
FB_HYS-PFM	FB comparator PFM hysteresis	PFM mode		10		mV
FB_HYS-COT	FB comparator dropout hysteresis	COT mode		4		mV
I_FB	FB pin input bias current	V_FB = 1 V			100	nA
FB_LINE-REG	FB threshold variation over line	V_VIN = 3 V to 65 V		0.001		%/V
VOUT_LINE-REG	VOUT threshold variation over line	LM5165X, V_VIN = 6 V to 65 V LM5165Y, V_VIN = 4.5 V to 65 V		0.001		%/V
POWER GOOD
UVT_RISING	PGOOD comparator	FB voltage rising, relative to V_REF1		94%
UVT_FALLING	PGOOD comparator	FB voltage falling, relative to V_REF1		87%
R_PGOOD	PGOOD on-resistance	V_FB = 1 V		80	200	Ω
V_INMIN-PGOOD	Minimum VIN for valid PGOOD	V_VIN falling, I_PGOOD = 0.1 mA, V_PGOOD < 0.5 V		1.2	1.65	V
I_PGOOD	PGOOD off-state leakage current	V_FB = 1.2 V, V_PGOOD = 5.5 V		10	100	nA
ENABLE / UVLO
V_IN-ON	Turnon threshold	VIN voltage rising	2.6	2.75	2.95	V
V_IN-OFF	Turnoff threshold	VIN voltage falling	2.35	2.45	2.6	V
V_EN-ON	Enable turnon threshold	EN voltage rising	1.163	1.212	1.262	V
V_EN-OFF	Enable turnoff threshold	EN voltage falling	1.109	1.144	1.178	V
V_EN-HYS	Enable hysteresis			68		mV
V_EN-SD	EN shutdown threshold	EN voltage falling	0.3	0.6		V
R_HYS	HYS on-resistance	V_EN = 1 V		80	200	Ω
I_HYS	HYS off-state leakage current	V_EN = 1.5 V, V_HYS = 5.5 V		10	100	nA
SOFT-START
I_SS	Soft-start charging current	V_SS = 1 V		10		µA
T_SS-INT	Soft-start rise time	SS floating		900		µs
THERMAL SHUTDOWN
T_J-SD	Thermal shutdown threshold			170		°C
T_J-SD-HYS	Thermal shutdown hysteresis			10		°C

(1) All hot and cold limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control.

(2) The junction temperature (T_J in °C) is calculated from the ambient temperature (T_A in °C) and power dissipation (P_D in Watts) as follows: T_J = T_A + (P_D × R_θJA) where R_θJA (in °C/W) is the package thermal impedance provided in Section 6.4.