ZHCSET6E November   2015  – December 2019 MSP430FR2532 , MSP430FR2533 , MSP430FR2632 , MSP430FR2633

PRODUCTION DATA.  

  1. 1器件概述
    1. 1.1 特性
    2. 1.2 应用
    3. 1.3 说明
    4. 1.4 功能框图
  2. 2修订历史记录
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagrams
    2. 4.2 Pin Attributes
    3. 4.3 Signal Descriptions
    4. 4.4 Pin Multiplexing
    5. 4.5 Buffer Types
    6. 4.6 Connection of Unused Pins
  5. 5Specifications
    1. 5.1       Absolute Maximum Ratings
    2. 5.2       ESD Ratings
    3. 5.3       Recommended Operating Conditions
    4. 5.4       Active Mode Supply Current Into VCC Excluding External Current
    5. 5.5       Active Mode Supply Current Per MHz
    6. 5.6       Low-Power Mode LPM0 Supply Currents Into VCC Excluding External Current
    7. 5.7       Low-Power Mode (LPM3 and LPM4) Supply Currents (Into VCC) Excluding External Current
    8. 5.8       Low-Power Mode LPMx.5 Supply Currents (Into VCC) Excluding External Current
    9. 5.9       Typical Characteristics - Low-Power Mode Supply Currents
    10. Table 5-1 Typical Characteristics – Current Consumption Per Module
    11. 5.10      Thermal Resistance Characteristics
    12. 5.11      Timing and Switching Characteristics
      1. 5.11.1  Power Supply Sequencing
        1. Table 5-2 PMM, SVS and BOR
      2. 5.11.2  Reset Timing
        1. Table 5-3 Wake-up Times From Low-Power Modes and Reset
      3. 5.11.3  Clock Specifications
        1. Table 5-4 XT1 Crystal Oscillator (Low Frequency)
        2. Table 5-5 DCO FLL, Frequency
        3. Table 5-6 DCO Frequency
        4. Table 5-7 REFO
        5. Table 5-8 Internal Very-Low-Power Low-Frequency Oscillator (VLO)
        6. Table 5-9 Module Oscillator (MODOSC)
      4. 5.11.4  Digital I/Os
        1. Table 5-10 Digital Inputs
        2. Table 5-11 Digital Outputs
        3. 5.11.4.1   Typical Characteristics – Outputs at 3 V and 2 V
      5. 5.11.5  VREF+ Built-in Reference
        1. Table 5-12 VREF+
      6. 5.11.6  Timer_A
        1. Table 5-13 Timer_A
      7. 5.11.7  eUSCI
        1. Table 5-14 eUSCI (UART Mode) Clock Frequency
        2. Table 5-15 eUSCI (UART Mode)
        3. Table 5-16 eUSCI (SPI Master Mode) Clock Frequency
        4. Table 5-17 eUSCI (SPI Master Mode)
        5. Table 5-18 eUSCI (SPI Slave Mode)
        6. Table 5-19 eUSCI (I2C Mode)
      8. 5.11.8  ADC
        1. Table 5-20 ADC, Power Supply and Input Range Conditions
        2. Table 5-21 ADC, 10-Bit Timing Parameters
        3. Table 5-22 ADC, 10-Bit Linearity Parameters
      9. 5.11.9  CapTIvate
        1. Table 5-23 CapTIvate Electrical Characteristics
        2. Table 5-24 CapTIvate Signal-to-Noise Ratio Characteristics
      10. 5.11.10 FRAM
        1. Table 5-25 FRAM
      11. 5.11.11 Debug and Emulation
        1. Table 5-26 JTAG, Spy-Bi-Wire Interface
        2. Table 5-27 JTAG, 4-Wire Interface
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  CPU
    3. 6.3  Operating Modes
    4. 6.4  Interrupt Vector Addresses
    5. 6.5  Bootloader (BSL)
    6. 6.6  JTAG Standard Interface
    7. 6.7  Spy-Bi-Wire Interface (SBW)
    8. 6.8  FRAM
    9. 6.9  Memory Protection
    10. 6.10 Peripherals
      1. 6.10.1  Power-Management Module (PMM)
      2. 6.10.2  Clock System (CS) and Clock Distribution
      3. 6.10.3  General-Purpose Input/Output Port (I/O)
      4. 6.10.4  Watchdog Timer (WDT)
      5. 6.10.5  System (SYS) Module
      6. 6.10.6  Cyclic Redundancy Check (CRC)
      7. 6.10.7  Enhanced Universal Serial Communication Interface (eUSCI_A0, eUSCI_B0)
      8. 6.10.8  Timers (Timer0_A3, Timer1_A3, Timer2_A2 and Timer3_A2)
      9. 6.10.9  Hardware Multiplier (MPY)
      10. 6.10.10 Backup Memory (BAKMEM)
      11. 6.10.11 Real-Time Clock (RTC)
      12. 6.10.12 10-Bit Analog-to-Digital Converter (ADC)
      13. 6.10.13 CapTIvate Technology
      14. 6.10.14 Embedded Emulation Module (EEM)
    11. 6.11 Input/Output Diagrams
      1. 6.11.1 Port P1 Input/Output With Schmitt Trigger
      2. 6.11.2 Port P2 (P2.0 to P2.2) Input/Output With Schmitt Trigger
      3. 6.11.3 Port P2 (P2.3 to P2.7) Input/Output With Schmitt Trigger
      4. 6.11.4 Port P3 (P3.0 to P3.2) Input/Output With Schmitt Trigger
    12. 6.12 Device Descriptors
    13. 6.13 Memory
      1. 6.13.1 Memory Organization
      2. 6.13.2 Peripheral File Map
    14. 6.14 Identification
      1. 6.14.1 Revision Identification
      2. 6.14.2 Device Identification
      3. 6.14.3 JTAG Identification
  7. 7Applications, Implementation, and Layout
    1. 7.1 Device Connection and Layout Fundamentals
      1. 7.1.1 Power Supply Decoupling and Bulk Capacitors
      2. 7.1.2 External Oscillator
      3. 7.1.3 JTAG
      4. 7.1.4 Reset
      5. 7.1.5 Unused Pins
      6. 7.1.6 General Layout Recommendations
      7. 7.1.7 Do's and Don'ts
    2. 7.2 Peripheral- and Interface-Specific Design Information
      1. 7.2.1 ADC Peripheral
        1. 7.2.1.1 Partial Schematic
        2. 7.2.1.2 Design Requirements
        3. 7.2.1.3 Layout Guidelines
      2. 7.2.2 CapTIvate Peripheral
        1. 7.2.2.1 Device Connection and Layout Fundamentals
        2. 7.2.2.2 Measurements
          1. 7.2.2.2.1 SNR
          2. 7.2.2.2.2 Sensitivity
          3. 7.2.2.2.3 Power
    3. 7.3 CapTIvate Technology Evaluation
  8. 8器件和文档支持
    1. 8.1  入门和后续步骤
    2. 8.2  器件命名规则
    3. 8.3  工具和软件
    4. 8.4  文档支持
    5. 8.5  相关链接
    6. 8.6  社区资源
    7. 8.7  商标
    8. 8.8  静电放电警告
    9. 8.9  Export Control Notice
    10. 8.10 Glossary
  9. 9机械、封装和可订购信息

说明

MSP430FR263x 和 MSP430FR253x 是用于电容式触控检测的超低功耗 MSP430™ 微控制器,采用 CapTIvate™ 触控技术,适用于按钮、滑块、滚轮及接近传感 应用中的数字输入 D 类音频放大器。采用 CapTIvate 技术的 MSP430 MCU 提供市面上最高集成度和自主性的电容式触控解决方案,具有高可靠性和抗噪能力以及最低功耗。TI 的电容式触控技术支持在同一设计方案中同时使用自电容式和互电容式电极,最大限度地提高了灵活性。采用 CapTIvate 技术的 MSP430 MCU 可以穿透厚玻璃、塑料外壳、金属和木材,在恶劣的环境(包括潮湿、油腻和脏污环境)中工作。

TI 电容式触控感应 MSP430 MCU 由一个由各种软、硬件资源组成的生态系统提供支持,并配套提供有参考设计和代码示例,可帮助您快速开展设计。开发套件包括 MSP-CAPT-FR2633 CapTIvate 技术开发套件。TI 还提供免费的软件,如 CapTIvate 设计中心,工程师可以在其中 借助 方便易用的 GUI 和 MSP430Ware™ 软件以及包括 CapTIvate 技术指南在内的综合性文档快速进行应用开发。

TI 的 MSP430 超低功耗 (ULP) FRAM 微控制器平台将独特的嵌入式 FRAM 和全面的超低功耗系统架构相结合,从而使系统设计人员能够在降低能耗的同时提升性能。FRAM 技术将 RAM 的低能耗快速写入、灵活性和耐用性与闪存的非易失性相结合。

有关完整的模块说明,请参阅《MSP430FR4xx 和 MSP430FR2xx 系列器件用户指南》

器件信息(1)

器件型号 封装 封装尺寸(2)
MSP430FR2633IRHB VQFN (32) 5mm x 5mm
MSP430FR2533IRHB VQFN (32) 5mm × 5mm
MSP430FR2633IDA TSSOP (32) 11mm × 6.2mm
MSP430FR2533IDA TSSOP (32) 11mm × 6.2mm
MSP430FR2632IRGE 超薄四方扁平无引线 (VQFN) (24) 4mm x 4mm
MSP430FR2532IRGE 超薄四方扁平无引线 (VQFN) (24) 4mm x 4mm
MSP430FR2633IYQW DSBGA (24) 2.29mm × 2.34mm
MSP430FR2632IYQW DSBGA (24) 2.29mm × 2.34mm
要获得最新的米6体育平台手机版_好二三四、封装和订购信息,请参见封装选项附录Section 9),或者访问米6体育平台手机版_好二三四 (TI) 网站 www.yogichopra.com
这里显示的尺寸为近似值。要获得包含误差值的封装尺寸,请参见机械数据Section 9中)。

CAUTION

系统级静电放电 (ESD) 保护必须符合器件级 ESD 规范,以防发生电气过载或对数据或代码存储器造成干扰。有关更多信息,请参阅《MSP430 系统级 ESD 注意事项》