ZHCSF49B April   2016  – April 2022 INA301-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Alert Output ( ALERT Pin)
      2. 7.3.2 Current-Limit Threshold
        1. 7.3.2.1 Resistor-Controlled Current Limit
          1. 7.3.2.1.1 Resistor-Controlled, Current-Limit Example
        2. 7.3.2.2 Voltage-Source-Controlled Current Limit
      3. 7.3.3 Hysteresis
    4. 7.4 Device Functional Modes
      1. 7.4.1 Alert Mode
        1. 7.4.1.1 Transparent Output Mode
        2. 7.4.1.2 Latch Output Mode
  8. Applications and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Selecting a Current-Sensing Resistor
        1. 8.1.1.1 Selecting a Current-Sensing Resistor Example
      2. 8.1.2 Input Filtering
      3. 8.1.3 INA301-Q1 Operation With Common-Mode Voltage Transients Greater Than 36 V
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.