ZHCSFR4C DECEMBER   2016  – October 2017 TLV62569

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化电路原理图
      2. 5V 输入电压下的效率
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Power Save Mode
      2. 7.3.2 100% Duty Cycle Low Dropout Operation
      3. 7.3.3 Soft Startup
      4. 7.3.4 Switch Current Limit
      5. 7.3.5 Under Voltage Lockout
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enabling/Disabling the Device
      2. 7.4.2 Power Good
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Custom Design With WEBENCH® Tools
        2. 8.2.2.2 Setting the Output Voltage
        3. 8.2.2.3 Output Filter Design
        4. 8.2.2.4 Inductor Selection
        5. 8.2.2.5 Input and Output Capacitor Selection
      3. 8.2.3 Application Performance Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 开发支持
        1. 11.1.2.1 使用 WEBENCH® 工具创建定制设计
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

Electrical Characteristics

VIN = 5.0 V, TJ = 25°C, unless otherwise noted
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SUPPLY
IQ Quiescent current into VIN pin Not switching 35 uA
ISD Shutdown current into VIN pin EN = 0 V 0.1 2 µA
VUVLO Under voltage lock out VIN falling 2.3 2.45 V
Under voltage lock out hysteresis 100 mV
TJSD Thermal shutdown Junction temperature rising 150 °C
Junction temperature falling 130
LOGIC INTERFACE
VIH High-level threshold at EN pin 2.5 V ≤ VIN ≤ 5.5 V 0.95 1.2 V
VIL Low-level threshold at EN pin 2.5 V ≤ VIN ≤ 5.5 V 0.4 0.85 V
tSS Soft startup time TLV62569DBV 800 µs
TLV62569PDDC, TLV62569DRL, TLV62569PDRL 900
VPG Power good threshold VFB rising, referenced to VFB nominal 95%
VFB falling, referenced to VFB nominal 90%
VPG,OL Power good low-level output voltage ISINK = 1 mA 0.4 V
IPG,LKG Input leakage current into PG pin VPG = 5.0 V 0.01 µA
tPG,DLY Power good delay time VFB falling 40 µs
OUTPUT
VFB Feedback regulation voltage 0.588 0.6 0.612 V
RDS(on) High-side FET on resistance 100
Low-side FET on resistance 60
ILIM High-side FET current limit TLV62569DBV, TLV62569PDDC 3 A
TLV62569DRL, TLV62569PDRL 2.5
fSW Switching frequency VOUT = 2.5 V 1.5 MHz