米6体育平台手机版

ZHCSG45B March 2017 – March 2018 LM5113-Q1

PRODUCTION DATA.

6.5 Electrical Characteristics

Specifications are T_J = 25°C. Unless otherwise specified: V_DD = V_HB = 5 V, V_SS = V_HS = 0 V.
No load on LOL and HOL or HOH and HOL⁽¹⁾.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
SUPPLY CURRENTS
I_DD	VDD quiescent current	LI = HI = 0 V	T_J = 25°C		0.07		mA
I_DD	VDD quiescent current	LI = HI = 0 V	T_J = –40°C to 125°C			0.1	mA
I_DDO	VDD operating current	f = 500 kHz	T_J = 25°C		2		mA
I_DDO	VDD operating current	f = 500 kHz	T_J = –40°C to 125°C			3	mA
I_HB	Total HB quiescent current	LI = HI = 0 V	T_J = 25°C		0.08		mA
I_HB	Total HB quiescent current	LI = HI = 0 V	T_J = –40°C to 125°C			0.1	mA
I_HBO	Total HB operating current	f = 500 kHz	T_J = 25°C		1.5		mA
I_HBO	Total HB operating current	f = 500 kHz	T_J = –40°C to 125°C			2.5	mA
I_HBS	HB to VSS quiescent current	HS = HB = 90 V	T_J = 25°C		0.1		µA
I_HBS	HB to VSS quiescent current	HS = HB = 90 V	T_J = –40°C to 125°C			10	µA
I_HBSO	HB to VSS operating current	f = 500 kHz	T_J = 25°C		0.4		mA
I_HBSO	HB to VSS operating current	f = 500 kHz	T_J = –40°C to 125°C			1	mA
INPUT PINS
V_IR	Input voltage threshold	Rising edge	T_J = 25°C		2.06		V
V_IR	Input voltage threshold	Rising edge	T_J = –40°C to 125°C	1.89		2.18	V
V_IF	Input voltage threshold	Falling edge	T_J = 25°C		1.66		V
V_IF	Input voltage threshold	Falling edge	T_J = –40°C to 125°C	1.48		1.76	V
V_IHYS	Input voltage hysteresis				400		mV
R_I	Input pulldown resistance	T_J = 25°C			200		kΩ
R_I	Input pulldown resistance	T_J = –40°C to 125°C		100		300	kΩ
UNDERVOLTAGE PROTECTION
V_DDR	VDD rising threshold	T_J = 25°C			3.8		V
V_DDR	VDD rising threshold	T_J = –40°C to 125°C		3.2		4.5	V
V_DDH	VDD threshold hysteresis				0.2		V
V_HBR	HB rising threshold	T_J = 25°C			3.2		V
V_HBR	HB rising threshold	T_J = –40°C to 125°C		2.5		3.9	V
V_HBH	HB threshold hysteresis				0.2		V
BOOTSTRAP DIODE
V_DL	Low-current forward voltage	I_VDD-HB = 100 µA	T_J = 25°C		0.45		V
V_DL	Low-current forward voltage	I_VDD-HB = 100 µA	T_J = –40°C to 125°C			0.65	V
V_DH	High-current forward voltage	I_VDD-HB = 100 mA	T_J = 25°C		0.90		V
V_DH	High-current forward voltage	I_VDD-HB = 100 mA	T_J = –40°C to 125°C			1	V
R_D	Dynamic resistance	I_VDD-HB = 100 mA	T_J = 25°C		1.85		Ω
R_D	Dynamic resistance	I_VDD-HB = 100 mA	T_J = –40°C to 125°C			3.60	Ω
	HB-HS clamp regulation voltage		T_J = 25°C		5.2		V
	HB-HS clamp regulation voltage		T_J = –40°C to 125°C	4.7		5.45	V
LOW- AND HIGH-SIDE GATE DRIVER
V_OL	Low-level output voltage	I_HOL = I_LOL = 100 mA	T_J = 25°C		0.06		V
V_OL	Low-level output voltage	I_HOL = I_LOL = 100 mA	T_J = –40°C to 125°C			0.10	V
V_OH	High-level output voltage V_OH = VDD – LOH or V_OH = HB – HOH	I_HOH = I_LOH = 100 mA	T_J = 25°C		0.21		V
V_OH		I_HOH = I_LOH = 100 mA	T_J = –40°C to 125°C			0.31	V
I_OHL	Peak source current	HOH, LOH = 0 V			1.2		A
I_OLL	Peak sink current	HOL, LOL = 5 V			5		A
I_OHLK	High-level output leakage current	HOH, LOH = 0 V	T_J = –40°C to 125°C			1.5	µA
I_OLLK	Low-level output leakage current	HOL, LOL = 5 V	T_J = –40°C to 125°C			1.5	µA