ZHCSGE8A June   2017  – August 2018 UCC27712

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化原理图
      2.      典型传播延迟比较
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dynamic Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD and Under Voltage Lockout
      2. 7.3.2 Input and Output Logic Table
      3. 7.3.3 Input Stage
      4. 7.3.4 Output Stage
      5. 7.3.5 Level Shift
      6. 7.3.6 Low Propagation Delays and Tightly Matched Outputs
      7. 7.3.7 Parasitic Diode Structure
    4. 7.4 Device Functional Modes
      1. 7.4.1 Minimum Input Pulse Operation
      2. 7.4.2 Output Interlock and Dead Time
      3. 7.4.3 Operation Under 100% Duty Cycle Condition
      4. 7.4.4 Operation Under Negative HS Voltage Condition
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Selecting HI and LI Low Pass Filter Components (RHI, RLI, CHI, CLI)
        2. 8.2.2.2 Selecting Bootstrap Capacitor (CBOOT)
        3. 8.2.2.3 Selecting VDD Bypass/Holdup Capacitor (CVDD) and Rbias
        4. 8.2.2.4 Selecting Bootstrap Resistor (RBOOT)
        5. 8.2.2.5 Selecting Gate Resistor RON/ROFF
        6. 8.2.2.6 Selecting Bootstrap Diode
        7. 8.2.2.7 Estimate the UCC27712 Power Losses (PUCC27712)
        8. 8.2.2.8 Estimating Junction Temperature
        9. 8.2.2.9 Operation With IGBT's
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 相关链接
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

7.3.4 Output Stage

The UCC27712 device output stage pull-up structure features a P-Channel MOSFET to provide source current until the output is saturated to VDD or HB. The ROH parameter (see Figure 21) is a DC measurement and it is representative of the on-resistance of the P-Channel device.

The pull-down structure in UCC27712 is composed of a N-Channel MOSFET. The ROL parameter   (see Figure 19), which is also a DC measurement, is representative of the impedance of the pull-down stage in the device.

Each output stage in UCC27712 is capable of supplying 1.8-A peak source and 2.8-A peak sink current pulses. The output voltage swings between (VDD and COM) / (HB and HS) providing rail-to-rail operation, thanks to the MOSFET output stage which delivers very low drop-out.

UCC27712 outputstage_slusce9.gifFigure 32. Output Stage Structure
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