Table 5-25 Pad Voltage and Current Characteristics for Hibernate WAKE Pin
over operating free-air temperature (unless otherwise noted)(1)(2)PARAMETER | MIN | TYP | MAX | UNIT |
ILKG+ |
Positive I/O leakage for VDD ≤ VIN ≤ VBAT + 0.3 V |
| | 300 |
nA |
ILKG- |
Negative I/O leakage for –0.3 V ≤ VIN ≤ 0 V(3) |
| | 43.3 |
µA |
IINJ+ |
Maximum positive injection if not voltage protected |
| | 2 |
mA |
IINJ- |
Maximum negative injection if not voltage protected (4) |
| | –0.5 |
mA |
(1) V
IN must be within the range specified in
Section 5.1. Leakage current outside of this maximum voltage is not ensured and can result in permanent damage of the device.
(2) VDD must be within the range specified in
Section 5.4.
(3) Leakage outside the minimum range (–0.3 V) is unbounded and must be limited to IINJ- using an external resistor.
(4) If the I/O pad is not voltage limited, it should be current limited (to IINJ + and IINJ-) if there is any possibility of the pad voltage exceeding the VIO limits (including transient behavior during supply ramp up, or at any time when the part is unpowered).