ZHCSH45B June 2017 – October 2021 TPS7A83A
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
VUVLO1(IN) | Input supply UVLO with BIAS | VIN rising with VBIAS = 3.0 V | 1.02 | 1.085 | V | |||
VHYS1(IN) | VUVLO1(IN) hysteresis | VBIAS = 3.0 V | 320 | mV | ||||
VUVLO2(IN) | Input supply UVLO without BIAS | VIN rising | 1.31 | 1.39 | V | |||
VHYS2(IN) | VUVLO2(IN) hysteresis | 253 | mV | |||||
VUVLO(BIAS) | Bias supply UVLO | VBIAS rising, VIN = 1.1 V | 2.83 | 2.9 | V | |||
VHYS(BIAS) | VUVLO(BIAS) hysteresis | VIN = 1.1 V | 290 | mV | ||||
IEN | EN pin current | VIN = 6.5 V, VEN = 0 V and 6.5 V | –0.1 | 0.1 | µA | |||
IBIAS | BIAS pin current | VIN = 1.1 V, VBIAS = 6.5 V, VOUT(nom) = VOUT_MIN, IOUT = 2 A |
2.3 | 3.5 | mA | |||
VIL(EN) | EN pin low-level input voltage (disable device) |
0 | 0.5 | V | ||||
VIH(EN) | EN pin high-level input voltage (enable device) |
1.1 | 6.5 | V | ||||
VOL(PG) | PG pin low-level output voltage | VOUT < VIT(PG), IPG = –1 mA (current into device) |
0.4 | V | ||||
Ilkg(PG) | PG pin leakage current | VOUT > VIT(PG), VPG = 6.5 V | 1 | µA | ||||
INR/SS | NR/SS pin charging current | VNR/SS = GND, VIN = 6.5 V | 4.0 | 6.6 | 9.0 | µA | ||
IFB | FB pin leakage current | VIN = 6.5 V | –100 | 100 | nA | |||
Tsd | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | ||||
Reset, temperature decreasing | 140 | |||||||
TJ | Operating junction temperature | –40 | 125 | °C |