ZHCSH74B
december 2017 – august 2023
LMK61E07
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics - Power Supply
6.6
LVPECL Output Characteristics
6.7
LVDS Output Characteristics
6.8
HCSL Output Characteristics
6.9
Frequency Tolerance Characteristics
6.10
Frequency Margining Characteristics
6.11
Power-On Reset Characteristics (VDD)
6.12
I2C-Compatible Interface Characteristics (SDA, SCL)
6.13
PSRR Characteristics
6.14
Other Characteristics
6.15
PLL Clock Output Jitter Characteristics
6.16
Typical 156.25-MHz Output Phase Noise Characteristics
6.17
Typical 161.1328125 MHz Output Phase Noise Characteristics
6.18
Additional Reliability and Qualification
6.19
Typical Characteristics
7
Parameter Measurement Information
7.1
Device Output Configurations
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Device Block-Level Description
8.3.2
Device Configuration Control
8.3.3
Register File Reference Convention
8.3.4
Configuring the PLL
8.3.5
Integrated Oscillator
8.3.6
Reference Divider and Doubler
8.3.7
Phase Frequency Detector
8.3.8
Feedback Divider (N)
8.3.9
Fractional Engine
8.3.10
Charge Pump
8.3.11
Loop Filter
8.3.12
VCO Calibration
8.3.13
High-Speed Output Divider
8.3.14
High-Speed Clock Output
8.3.15
Device Status
8.3.15.1
Loss of Lock
8.4
Device Functional Modes
8.4.1
Interface and Control
8.4.2
DCXO Mode and Frequency Margining
8.4.2.1
DCXO Mode
8.4.2.2
Fine Frequency Margining
8.4.2.3
Coarse Frequency Margining
8.5
Programming
8.5.1
I2C Serial Interface
8.5.2
Block Register Write
8.5.3
Block Register Read
8.5.4
Write SRAM
8.5.5
Write EEPROM
8.5.6
Read SRAM
8.5.7
Read EEPROM
8.6
Register Maps
8.6.1
Register Descriptions
8.6.1.1
VNDRID_BY1 Register; R0
8.6.1.2
VNDRID_BY0 Register; R1
8.6.1.3
PRODID Register; R2
8.6.1.4
REVID Register; R3
8.6.1.5
TARGETADR Register; R8
8.6.1.6
EEREV Register; R9
8.6.1.7
DEV_CTL Register; R10
8.6.1.8
XO_CAPCTRL_BY1 Register; R16
8.6.1.9
XO_CAPCTRL_BY0 Register; R17
8.6.1.10
DIFFCTL Register; R21
8.6.1.11
OUTDIV_BY1 Register; R22
8.6.1.12
OUTDIV_BY0 Register; R23
8.6.1.13
RDIVCMOSCTL Register; R24
8.6.1.14
PLL_NDIV_BY1 Register; R25
8.6.1.15
PLL_NDIV_BY0 Register; R26
8.6.1.16
PLL_FRACNUM_BY2 Register; R27
8.6.1.17
PLL_FRACNUM_BY1 Register; R28
8.6.1.18
PLL_FRACNUM_BY0 Register; R29
8.6.1.19
PLL_FRACDEN_BY2 Register; R30
8.6.1.20
PLL_FRACDEN_BY1 Register; R31
8.6.1.21
PLL_FRACDEN_BY0 Register; R32
8.6.1.22
PLL_MASHCTRL Register; R33
8.6.1.23
PLL_CTRL0 Register; R34
8.6.1.24
PLL_CTRL1 Register; R35
8.6.1.25
PLL_LF_R2 Register; R36
8.6.1.26
PLL_LF_C1 Register; R37
8.6.1.27
PLL_LF_R3 Register; R38
8.6.1.28
PLL_LF_C3 Register; R39
8.6.1.29
PLL_CALCTRL Register; R42
8.6.1.30
NVMSCRC Register; R47
8.6.1.31
NVMCNT Register; R48
8.6.1.32
NVMCTL Register; R49
8.6.1.33
NVMLCRC Register; R50
8.6.1.34
MEMADR Register; R51
8.6.1.35
NVMDAT Register; R52
8.6.1.36
RAMDAT Register; R53
8.6.1.37
NVMUNLK Register; R56
8.6.1.38
INT_LIVE Register; R66
8.6.1.39
SWRST Register; R72
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.2.1
PLL Loop Filter Design
9.2.2.2
Spur Mitigation Techniques
9.2.2.2.1
Phase Detection Spur
9.2.2.2.2
Integer Boundary Fractional Spur
9.2.2.2.3
Primary Fractional Spur
9.2.2.2.4
Sub-Fractional Spur
9.2.2.3
Device Programming
9.2.3
Application Curves
9.3
Power Supply Recommendations
9.4
Layout
9.4.1
Layout Guidelines
9.4.1.1
Ensured Thermal Reliability
9.4.1.2
Best Practices for Signal Integrity
9.4.1.3
Recommended Solder Reflow Profile
9.4.2
Layout Example
10
Device and Documentation Support
10.1
Documentation Support
10.1.1
Related Documentation
10.2
接收文档更新通知
10.3
支持资源
10.4
Trademarks
10.5
静电放电警告
10.6
术语表
11
Mechanical, Packaging, and Orderable Information
6.3
Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VDD
Device supply voltage
3.135
3.3
3.465
V
T
A
Ambient temperature
–40
25
85
°C
T
J
Junction temperature
115
°C
t
RAMP
VDD power-up ramp time
0.1
100
ms
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