米6体育平台手机版

ZHCSHO1D November 2018 – January 2019 LMG1210

PRODUCTION DATA.

6.5 Electrical Characteristics

VDD=5V, HB-HS=4.6V, outputs unloaded over operating junction temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY CURRENT
I_DD	Quiescent Current for Low-Side Circuits Only, Vin=6V, powered through LDO	LI, HI=0V, Independent Mode		300	475	μA
I_DD		EN=0V, PWM=X, PWM Input Mode, R_DHL and R_DLH = 1.78MΩ		380	550	μA
I_HB	HB Quiescent Current	HI=0V, Independent Mode		520	850	μA
I_HBS	HB to V_SS Quiescent Current	V_HS=100V		1		nA
I_HBSO	HB to V_SS Operating Current	V_HS=100V, F_SW=1MHz		1		nA
I_LSDyn	Low-side dynamic current	Unloaded, PWM Mode		1	1.25	mA/MHz
I_HSDyn	High-side dynamic current	Unloaded		0.5	0.7	mA/MHz
LOW-SIDE TO HIGH-SIDE CAPACITANCE
C_ISO	Capacitance from High to Low Side	Low Side Pins Shorted Together, High Side Pins Shorted Together		0.25		pF
5V LDO
V_5V	LDO Output	V_IN=10V	4.75	5.00	5.25	V
V_DO	Dropout Voltage	I_O=100mA		400	750	mV
I_LDOM	Maximum Current	V_IN=12V	100			mA
I_SC	Short Circuit Current	V_IN=12V	105		250	mA
C_OUT	Minimum Required Output Capacitance⁽²⁾	Effective Capacitance at Bias Voltage			0.3	µF
DIGITAL INPUT PINS (LI/PWM & HI/EN)
V_IR	Input Rising Edge Threshold		1.70		2.45	V
V_IF	Input Falling Edge Threshold		0.70		1.30	V
V_IHYS	Input Hysteresis			1		V
R_IPD	Input Pull-Down Resistance	V_LI, V_HI=1V	100	200	300	kΩ
UNDERVOLTAGE LOCKOUT
V_DDR	V_DD Rising Threshold		4.00	4.25	4.50	V
V_DDF	V_DD Falling Threshold		3.8	4.05	4.3	V
V_DDH	V_DD Hysteresis			200		mV
V_HBR	HB-HS Rising Threshold		3.40	3.55	3.8	V
V_HBF	HB-HS Falling Threshold		3.30	3.45	3.65	V
V_HBH	HB-HS Hysteresis			130		mV
BOOTSTRAP DIODE SWITCH
R_SW	Diode Switch On Resistance	I_D=100mA		0.4		Ω
GATE DRIVER
V_OL	Low-Level Output Voltage	I_OL=100mA			0.16	V
V_DD-V_OH	High-Level Output Voltage	I_OH= -100mA			0.30	V
I_OL	Peak Sink Current	V_LO,V_HO=5V	2.0	3.1	4.3	A
I_OH	Peak Source Current	V_LO,V_HO=0V	0.85	1.58	2.4	A
V_CLAMP	Unpowered Gate Clamp Voltage	V_DD, V_HB Floating, 1 mA pull-up applied to LO/HO		0.55	0.8	V
THERMAL SHUTDOWN
T_SD	Thermal Shutdown Switching, Rising Edge⁽¹⁾		150			°C
T_{SD_LDO}	Thermal Shut Down LDO, Rising Edge⁽¹⁾		160			°C
T_{HYS_SD}	Thermal Hysteresis, LDO & Switching⁽¹⁾		3	10		°C
T_{SD_HS}	Thermal Shutdown for High-Side, Rising Edge⁽¹⁾		160			°C
DEADTIME CONTROL RESISTORS
R_PU	Internal Pullup Resistor		23.5	25	27	kΩ

(1) Ensured by design

(2) Ensured by design