7.1 Overview

The LMG1210 is a high-speed half-bridge driver specifically designed to work with enhancement mode GaN FETs. Designed to operate up to 50 MHz, the LMG1210 is optimized for maximum performance and highly efficient operation. This includes reducing additional capacitance at the switch node (HS) to less than 1 pF and increased dV/dt noise immunity up to 300 V/ns on the HS pin to minimize additional switching losses. By having a 21 ns maximum propagation delay with 3.4 ns maximum mismatch, excessive dead times can be greatly reduced.

Auxiliary input voltages applied above 5 V enables an internal LDO to precisely regulate the output voltage at 5-V, preventing damage on the gate. An external bootstrap diode allows the designer to select an optimal diode. An integrated switch in series with the bootstrap diode stops overcharging of the bootstrap capacitor and decreases Q_rr losses in the diode.

The LMG1210 comes in a low-inductance WQFN package designed for small gate drive loops with minimal voltage overshoot.