ZHCSHO1D November   2018  – January 2019 LMG1210

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      简化的典型应用
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
    8. 6.8 Timing Diagrams
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bootstrap Diode Operation
      2. 7.3.2 LDO Operation
      3. 7.3.3 Dead Time Selection
      4. 7.3.4 Overtemperature Protection
      5. 7.3.5 High-Performance Level Shifter
      6. 7.3.6 Negative HS Voltage Handling
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Bypass Capacitor
        2. 8.2.2.2 Bootstrap Diode Selection
        3. 8.2.2.3 Handling Ground Bounce
        4. 8.2.2.4 Independent Input Mode
        5. 8.2.2.5 Computing Power Dissipation
      3. 8.2.3 Application Curves
    3. 8.3 Do's and Don'ts
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 术语表
  12. 12机械、封装和可订购信息

Power Supply Recommendations

The power to the LMG1210 can be supplied either through the LDO or the LDO can be bypassed and 5 V can be supplied directly. The maximum input voltage to the LDO of the LMG1210 is specified in the electrical characteristics table. The minimum input voltage of the LDO is set by the minimum drop-out of the LDO at the operational current. The dropout at max current is specified in the electrical characteristics table, but a lower dropout can be used in a lower-current application. A local bypass capacitor must be placed between the VIN and VSS pins, and the VDD and VSS pins. This capacitor must be placed as close as possible to the device. TI recommends a low-ESR, ceramic, surface-mount capacitor. TI also recommends using 2 capacitors across VDD and VSS pin: a 100 nF ceramic surface-mount capacitor for high frequency filtering placed very close to VDD and VSS pin, and another surface-mount capacitor, 220 nF to 10 μF, for IC bias requirement. The VIN and VSS capacitor can be removed if the LDO is bypassed.