ZHCSHS1D May   2017  – December 2021 AWR1243

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Functional Block Diagram
  5. Revision History
  6. Device Comparison
    1. 6.1 Related Products
  7. Terminal Configuration and Functions
    1. 7.1 Pin Diagram
    2. 7.2 Signal Descriptions
      1. 7.2.1 Signal Descriptions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Power-On Hours (POH)
    4. 8.4 Recommended Operating Conditions
    5. 8.5 Power Supply Specifications
    6. 8.6 Power Consumption Summary
    7. 8.7 RF Specification
    8. 8.8 Thermal Resistance Characteristics for FCBGA Package [ABL0161]
    9. 8.9 Timing and Switching Characteristics
      1. 8.9.1 Power Supply Sequencing and Reset Timing
      2. 8.9.2 Synchronized Frame Triggering
      3. 8.9.3 Input Clocks and Oscillators
        1. 8.9.3.1 Clock Specifications
      4. 8.9.4 Multibuffered / Standard Serial Peripheral Interface (MibSPI)
        1. 8.9.4.1 Peripheral Description
          1. 8.9.4.1.1 SPI Timing Conditions
          2. 8.9.4.1.2 SPI Peripheral Mode Switching Parameters (SPICLK = input, SPISIMO = input, and SPISOMI = output)
          3. 8.9.4.1.3 SPI Peripheral Mode Timing Requirements (SPICLK = input, SPISIMO = input, and SPISOMI = output)
        2. 8.9.4.2 Typical Interface Protocol Diagram (Peripheral Mode)
      5. 8.9.5 LVDS Interface Configuration
        1. 8.9.5.1 LVDS Interface Timings
      6. 8.9.6 General-Purpose Input/Output
        1. 8.9.6.1 Switching Characteristics for Output Timing versus Load Capacitance (CL)
      7. 8.9.7 Camera Serial Interface (CSI)
        1. 8.9.7.1 CSI Switching Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Subsystems
      1. 9.3.1 RF and Analog Subsystem
        1. 9.3.1.1 Clock Subsystem
        2. 9.3.1.2 Transmit Subsystem
        3. 9.3.1.3 Receive Subsystem
      2. 9.3.2 Host Interface
    4. 9.4 Other Subsystems
      1. 9.4.1 ADC Data Format Over CSI2 Interface
  10. 10Monitoring and Diagnostics
    1. 10.1 Monitoring and Diagnostic Mechanisms
  11. 11Applications, Implementation, and Layout
    1. 11.1 Application Information
    2. 11.2 Short-, Medium-, and Long-Range Radar
    3. 11.3 Reference Schematic
  12. 12Device and Documentation Support
    1. 12.1 Device Nomenclature
    2. 12.2 Tools and Software
    3. 12.3 Documentation Support
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Packaging Information
    2. 13.2 Tray Information for

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)
PARAMETERS(1)(2)MINMAXUNIT
VDDIN1.2 V digital power supply–0.51.4V
VIN_SRAM1.2 V power rail for internal SRAM–0.51.4V
VNWA1.2 V power rail for SRAM array back bias–0.51.4V
VIOINI/O supply (3.3 V or 1.8 V): All CMOS I/Os would operate on this supply.–0.53.8V
VIOIN_181.8 V supply for CMOS IO–0.52V
VIN_18CLK1.8 V supply for clock module–0.52V
VIOIN_18DIFF1.8 V supply for CSI2 port–0.52V
VIN_13RF11.3 V Analog and RF supply, VIN_13RF1 and VIN_13RF2 could be shorted on the board.–0.51.45V
VIN_13RF2
VIN_13RF11-V Internal LDO bypass mode. Device supports mode where external Power Management block can supply 1 V on VIN_13RF1 and VIN_13RF2 rails. In this configuration, the internal LDO of the device would be kept bypassed.–0.51.4V
VIN_13RF2
VIN_18BB1.8-V Analog baseband power supply–0.52V
VIN_18VCO supply1.8-V RF VCO supply–0.52V
RX1-4 Externally applied power on RF inputs 10 dBm
TX1-3 Externally applied power on RF outputs(3) 10 dBm
Input and output voltage rangeDual-voltage LVCMOS inputs, 3.3 V or 1.8 V (Steady State)–0.3VVIOIN + 0.3V
Dual-voltage LVCMOS inputs, operated at 3.3 V/1.8 V
(Transient Overshoot/Undershoot) or external oscillator input
VIOIN + 20% up to
20% of signal period
CLKP, CLKMInput ports for reference crystal –0.52V
Clamp currentInput or Output Voltages 0.3 V above or below their respective power rails. Limit clamp current that flows through the internal diode protection cells of the I/O.–2020mA
TJOperating junction temperature range–40125°C
TSTGStorage temperature range after soldered onto PC board–55150°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to VSS, unless otherwise noted.
This value is for an externally applied signal level on the TX. Additionally, a reflection coefficient up to Gamma = 1 can be applied on the TX output.