米6体育平台手机版

ZHCSHU2B March 2018 – October 2018 TPS7A10

PRODUCTION DATA.

6.5 Electrical Characteristics

over T_J = –40°C to +125°C, V_IN = V_OUT(NOM)+ 0.5 V, V_BIAS = V_OUT(NOM) + 1.4 V, I_OUT = 1 mA, V_EN = 1.0 V, C_IN = 2.2 μF, C_OUT = 2.2 μF, and C_BIAS = 0.1 μF ( unless otherwise noted); all typical values are at T_J = 25°C .

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
	Nominal Accuracy	T_J= 25°C	–0.5		0.5	%
	Accuracy over temperature	–20°C ≤ T_J ≤ 85, DSE package V_OUT(NOM) + 0.5 V ≤ V_IN ≤ 3.3 V, V_OUT(NOM) + 1.4 V ≤ V_BIAS ≤ 5.5 V, 1 mA ≤ I_OUT ≤ 300 mA	–1.25		1.25
		–40°C ≤ T_J ≤ 85, YKA package V_OUT(NOM) + 0.5 V ≤ V_IN ≤ 3.3 V, V_OUT(NOM) + 1.4 V ≤ V_BIAS ≤ 5.5 V, 1 mA ≤ I_OUT ≤ 300 mA	–1.25		1.25
		–40°C ≤ T_J ≤ 125, DSE and YKA package V_OUT(NOM) + 0.5 V ≤ V_IN ≤ 3.3 V, V_OUT(NOM) + 1.4 V ≤ V_BIAS ≤ 5.5 V, 1 mA ≤ I_OUT ≤ 300 mA	–1.5		1.5
ΔV_OUT / ΔV_IN	V_INline regulation	V_OUT(NOM) + 0.5 V ≤ V_IN≤ 3.3 V		0.001		%/V
ΔV_OUT / ΔV_BIAS	V_BIASline regulation	V_OUT(NOM) + 1.4 V ≤ V_BIAS ≤ 5.5 V		0.03		%/V
ΔV_OUT / ΔI_OUT	Load regulation	0.1 mA ≤ I_OUT ≤ 300 mA		0.2		%/A
I_Q(BIAS)	Bias pin current	T_J = 25°C, I_OUT = 0 mA	3	6	8	µA
		–40°C < T_J < 85°C, I_OUT = 0 mA			11
		I_OUT = 0 mA			14
		I_OUT = 300 mA			60
I_Q(IN)	Input pin current⁽¹⁾	T_J = 25°C, I_OUT = 0 mA		1.6	2.1	µA
		–40°C < T_J < 85°C, I_OUT = 0 mA			2.3
		I_OUT = 0 mA			2.6
		I_OUT = 300 mA			9
I_SHDN(BIAS)	V_BIAS shutdown current	–40°C < T_J < 85°C, V_IN = 3.3 V, V_BIAS = 5.5 V, V_EN ≤ 0.4 V			400	nA
I_SHDN(BIAS)	V_BIAS shutdown current	–40°C < T_J < 125°C, V_IN = 3.3 V, V_BIAS = 5.5 V, V_EN ≤ 0.4 V			1200	nA
I_SHDN(IN)	V_IN shutdown current	–40°C < T_J < 85°C, V_IN = 3.3 V, V_BIAS = 5.5 V, V_EN ≤ 0.4 V			1	µA
I_SHDN(IN)	V_IN shutdown current	–40°C < T_J < 125°C, V_IN = 3.3 V, V_BIAS = 5.5 V, V_EN ≤ 0.4 V			3	µA
I_CL	Output current limit	V_OUT = 0.9 × V_OUT(NOM), YKA package	325	450	600	mA
I_CL	Output current limit	V_OUT = 0.9 × V_OUT(NOM), DSE package	350	450	625	mA
I_SC	Short circuit current limit	V_OUT = 0 V		150		mA
V_DO(IN)	V_IN dropout voltage⁽²⁾	V_IN = V_OUT(NOM) – 0.1 V, I_OUT = 300 mA, YKA package		40	70	mV
V_DO(IN)	V_IN dropout voltage⁽²⁾	V_IN = V_OUT(NOM) – 0.1 V, I_OUT = 300 mA, DSE package		55	90	mV
V_DO(BIAS)	V_BIAS dropout voltage⁽²⁾	I_OUT = 300 mA		0.85	1.05	V
V_DO(BIAS)	V_BIAS dropout voltage⁽²⁾	I_OUT = 150 mA		0.75	0.95	V
V_INPSRR	V_IN power-supply rejection ratio	f = 1 kHz, V_OUT = 1.1 V, I_OUT = 50 mA		60		dB
		f = 100 kHz, V_OUT = 1.1 V, I_OUT = 50 mA		36
		f = 1 MHz, V_OUT = 1.1 V, I_OUT = 50 mA		32
		f = 1.5 MHz, V_OUT = 1.1 V, I_OUT = 50 mA		35
V_BIASPSRR	V_BIAS power-supply rejection ratio	f = 1 kHz, V_OUT = 1.1 V, I_OUT = 300 mA		60		dB
		f = 100 kHz, V_OUT = 1.1 V, I_OUT = 300 mA		40
		f = 1 MHz, V_OUT = 1.1 V, I_OUT = 300 mA		35
V_n	Output voltage noise	Bandwidth = 10 Hz to 100 kHz, V_OUT = 1.0 V, I_OUT = 50 mA		93.9		µV_RMS
V_UVLO(BIAS)	Bias supply UVLO	V_BIAS rising	1.46	1.54	1.63	V
V_UVLO(BIAS)	Bias supply UVLO	V_BIAS falling	1.35	1.44	1.55	V
V_{UVLO_HYST(BIAS)}	Bias supply hysteresis	V_BIAS hysteresis		80		mV
V_UVLO(IN)	Input supply UVLO	V_INrising	645	675	710	mV
V_UVLO(IN)	Input supply UVLO	V_IN falling	565	600	640	mV
V_{UVLO_HYST(IN)}	Input supply hysteresis	V_IN hysteresis		75		mV
t_STR	Start-up time⁽³⁾			525	1200	µs
V_HI(EN)	EN pin logic high voltage		0.9			V
V_LO(EN)	EN pin logic low voltage				0.4	V
I_EN	EN pin current	EN = 5.5 V		10		nA
R_PULLDOWN	Pulldown resistor	V_BIAS = 3.3 V, P version only		120		Ω
T_SD	Thermal shutdown temperature	Shutdown, temperature rising		160		°C
T_SD	Thermal shutdown temperature	Reset, temperature falling		145		°C

(1) This current flowing from V_IN to GND.

(2) Dropout is not measured for V_OUT < 1.0 V

(3) Startup time = time from EN assertion to 0.95 × V_OUT(NOM).