ZHCSIF0N September   2008  – October 2021 BQ24072 , BQ24073 , BQ24074 , BQ24075 , BQ24079

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Device Comparison Table
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings (1)
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Undervoltage Lockout (UVLO)
      2. 9.3.2 Power On
      3. 9.3.3 Overvoltage Protection (OVP)
      4. 9.3.4 Dynamic Power Path Management
        1. 9.3.4.1 Input Source Connected (ADAPTER or USB)
          1. 9.3.4.1.1 Input DPM Mode (VIN-DPM)
          2. 9.3.4.1.2 DPPM Mode
          3. 9.3.4.1.3 Battery Supplement Mode
        2. 9.3.4.2 Input Source Not Connected
      5. 9.3.5 Battery Charging
        1. 9.3.5.1 Charge Current Translator
        2. 9.3.5.2 Adjustable Termination Threshold (ITERM Input, BQ24074)
        3. 9.3.5.3 Termination Disable (TD Input, BQ24072, BQ24073)
        4. 9.3.5.4 Battery Detection and Recharge
        5. 9.3.5.5 Battery Disconnect (SYSOFF Input, BQ24075, BQ24079)
        6. 9.3.5.6 Dynamic Charge Timers (TMR Input)
        7. 9.3.5.7 Status Indicators ( PGOOD, CHG)
        8. 9.3.5.8 Thermal Regulation and Thermal Shutdown
      6. 9.3.6 Battery Pack Temperature Monitoring
    4. 9.4 Device Functional Modes
      1. 9.4.1 Sleep Mode
      2. 9.4.2 Explanation of Deglitch Times and Comparator Hysteresis
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 BQ2407x Charger Design Example
          1. 10.2.2.1.1 Termination Disable (TD) (BQ24072, BQ24073 only)
          2. 10.2.2.1.2 System ON/OFF (SYSOFF) (BQ24075 or BQ24079 only)
        2. 10.2.2.2 Calculations
          1. 10.2.2.2.1 Program the Fast Charge Current (ISET):
          2. 10.2.2.2.2 Program the Input Current Limit (ILIM)
          3. 10.2.2.2.3 Program the Termination Current Threshold (ITERM) (BQ24074 only)
          4. 10.2.2.2.4 Program 6.25-hour Fast-Charge Safety Timer (TMR)
        3. 10.2.2.3 TS Function
        4. 10.2.2.4 CHG and PGOOD
        5. 10.2.2.5 Selecting IN, OUT, and BAT Pin Capacitors
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 Standalone Charger
      2. 10.3.2 Disconnecting the Battery From the System
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

Revision History

Changes from Revision M (August 2019) to Revision N (October 2021)

  • 向“特性”添加了“提供功能安全型 (BQ24074)”Go
  • 向“特性”添加了“安全相关认证:IEC 62368-1 认证 (BQ24072)”Go
  • 更改了应用Go
  • Changed BQ24079T information and package in Section 6 Go
  • Added IBAT(PDWN) TYP valueGo
  • Added IIN TYP valuesGo
  • Added ICC TYP valueGo

Changes from Revision L (June 2018) to Revision M (August 2019)

  • 更改了文档标题Go
  • Changed the Device Comparison TableGo
  • Deleted the Dissipation Ratings tableGo
  • Changed VIN-LOW To VIN-DPM in the Functional Block Diagram Go
  • Changed text From: "the DPPM loop or the VIN-(LOW) loop." To: "the DPPM loop or the VIN-DPM loop." in the Battery Charging sectonGo
  • Chganged text From: " input voltage has fallen to VIN(LOW)" To: "input voltage has fallen to VIN-DPM" in the Dynamic Charge Timers (TMR Input) scrtionGo
  • Changed Equation 11 Go

Changes from Revision K (March 2015) to Revision L (June 2018)

  • Deleted MARKINGS from the Device Comparison TableGo
  • Added the RGT0016B and RGT0016C package information to the Device Comparison TableGo
  • Changed the Pinout images and descriptions Go
  • Change description of the CE pin From: "Connect CE to a high logic level to place the battery charger in standby mode. In standby mode,..." To ""Connect CE to a high logic level to disable battery charging. OUT is active and battery supplement mode is still available."Go
  • "Changed text in the third paragraph of the Power On section From: When VOUT is above VSC,..." To: "When VOUT is above VO(SC1),..."Go
  • Changed text From: "The valid resistor range is 590 Ω to 5.9 kΩ." To: "The valid resistor range is 590 Ω to 8.9 kΩ." in the Battery Charging sectionGo
  • Changed From: VIN(DT) To: VBAT + VIN(DT) in Table 9-1 Go
  • Changed INTC To: ITS in Figure 9-9 Go

Changes from Revision J (January 2015) to Revision K (March 2015)

  • Deleted package type code from Device Comparison Table. See the POA at the end of the data sheet. Go
  • Changed ICHG Battery fast charge current range MIN specification from "150 mA" to "100 mA"Go

Changes from Revision I (January 2014) to Revision J (January 2015)

  • 添加了 ESD 等级 表、特性说明 部分、器件功能模式应用和实施 部分、电源相关建议 部分、布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分Go

Changes from Revision H (December 2013) to Revision I (January 2014)

  • Changed resistor value from "3 kΩ" to "8.9 kΩ" in the Pin Functions table ISET Description paragraph.Go
  • Changed RISET spec MAX value from "3000" to "8900" in the Recommended Operating Conditions table.Go
  • Changed resistor value from "3 kΩ" to "5.9 kΩ" in the Battery Charging section paragraph.Go

Changes from Revision G (July 2011) to Revision H (December 2013)

  • Changed ICHG Battery fast charge current range MIN specification from "300 mA" to "150 mA"Go

Changes from Revision F (September 2010) to Revision G (July 2011)

  • Added ESD human body model specification to Abs Maximum Ratings table.Go

Changes from Revision E (August 2010) to Revision F (September 2010)

  • Changed 10 x 45 s/kΩ to 10 x 48 s/kΩ under section Program 6.25hour......(TMR)Go

Changes from Revision D (June 2009) to Revision E (August 2010)

  • Changed globally RT1 and RT2 to Rs and RpGo
  • Added equations 2 and 3 plus explanations and tableGo

Changes from Revision C (March 2009) to Revision D (June 2009)

  • 添加了器件型号 BQ24079Go
  • Added device number BQ24079 to the Ordering Information Table.Go
  • Added device number BQ24079 to the PIN Functions Table,Go
  • Added device number BQ24079.Go
  • Added device BQ24079Go
  • Added device BQ24079Go
  • Added device BQ24079Go
  • Added device BQ24079Go

Changes from Revision B (January 2009) to Revision C (March 2009)

  • Changed Maximum input current factor values. Go

Changes from Revision A (December 2008) to Revision B (January 2009)

  • Changed VBAT(REG) max value From 4.24 V To: 4.23 VGo

Changes from Revision * (September 2008) to Revision A (December 2008)

  • 更改了器件特性Go
  • 更改了说明Go
  • 更改了典型应用电路Go
  • Changed description of CHG pin.Go
  • Changed SYSOFF Description.Go
  • Added Figure 10-5 through Figure 8-1.Go
  • Changed DETAILED FUNCTIONAL DESCRIPTION section.Go
  • Changed the Functional Block Diagram Go
  • Changed text in section - STATUS INDICATORS ( PGOOD, CHG)Go
  • Changed Table - CHG STATUS INDICATORGo
  • Changed Equation 8 and Equation 9 Go
  • Changed APPLICATION CIRCUITS section.Go
  • Added Using BQ24075 to Disconnect the Battery from the System, Figure 10-13.Go
  • Changed section - Half-Wave AdaptorsGo