ZHCSIP2E April 2016 – October 2018 LMG3410R070 , LMG3411R070
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| GaN FET | ||||||
| dv/dt | Turn-on Drain Slew Rate | RDRV = 15 kΩ | 100 | V/ns | ||
| RDRV = 40 kΩ | 50 | |||||
| RDRV = 100 kΩ | 25 | |||||
| Δdv/dt | Slew Rate Variation | turn on, IL = 5 A, RDRV = 40 kΩ | 25 | % | ||
| dv/dt | Edge Rate Immunity | Drain dv/dt, device remains off inductor-fed, max di/dt = 10 A/ns | 150 | V/ns | ||
| STARTUP | ||||||
| tSTART | Startup Time, VIN rising above UVLO | Time until gate responds to IN CNEG = 2.2 µF, CLDO = 1 µF | 1 | ms | ||
| DRIVER | ||||||
| tpd,on | Propagation delay, turn on | IN rising to IDS > 1 A, VDS = 400 V RDRV = 40 kΩ, VNEG = -14 V | 20 | ns | ||
| tdelay,on | Turn on delay time | IDS > 1 A to VDS < 320 V, RDRV = 40 kΩ | 12 | ns | ||
| tVDS,ft | VDS fall time | VDS = 320 V to VDS = 80 V, ID = 5 A | 4.2 | ns | ||
| tpd,off | Propagation delay, turn off | IN falling to VDS > 10 V; ID = 5 A | 36 | ns | ||
| tdelay,off | Turn off delay time | VDS = 10 V to VDS = 80 V, ID = 5 A | 10 | ns | ||
| tVDS,rt | VDS rise time | VDS = 80 V to VDS = 320 V, ID = 5 A | 15 | ns | ||
| FAULT | ||||||
| tcurr | Current Fault Delay | IDS > ITH to FAULT low | 50 | ns | ||
| tblank | Current Fault Blanking Time | VIN>VIH to end of blanking, RDRV=15kΩ | 55 | ns | ||
| treset | Fault reset time | IN held low | 250 | 350 | 500 | µs |