ZHCSIP2E April   2016  – October 2018 LMG3410R070 , LMG3411R070

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化方框图
      2.      高于 100V/ns 时的开关性能
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Switching Parameters
      1. 7.1.1 Turn-on Delays
      2. 7.1.2 Turn-off Delays
      3. 7.1.3 Drain Slew Rate
      4. 7.1.4 Turn-on and Turn-off Energy
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Direct-Drive GaN Architecture
      2. 8.3.2 Internal Buck-Boost DC-DC Converter
      3. 8.3.3 Internal Auxiliary LDO
      4. 8.3.4 Fault Detection
        1. 8.3.4.1 Over-current Protection
        2. 8.3.4.2 Over-Temperature Protection and UVLO
      5. 8.3.5 Drive Strength Adjustment
    4. 8.4 Device Functional Modes
      1. 8.4.1 Low-Power Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Slew Rate Selection
          1. 9.2.2.1.1 Startup and Slew Rate with Bootstrap High-Side Supply
        2. 9.2.2.2 Signal Level-Shifting
        3. 9.2.2.3 Buck-Boost Converter Design
      3. 9.2.3 Application Curves
    3. 9.3 Paralleling GaN Devices
    4. 9.4 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Using an Isolated Power Supply
    2. 10.2 Using a Bootstrap Diode
      1. 10.2.1 Diode Selection
      2. 10.2.2 Managing the Bootstrap Voltage
      3. 10.2.3 Reliable Bootstrap Start-up
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Power Loop Inductance
      2. 11.1.2 Signal Ground Connection
      3. 11.1.3 Bypass Capacitors
      4. 11.1.4 Switch-Node Capacitance
      5. 11.1.5 Signal Integrity
      6. 11.1.6 High-Voltage Spacing
      7. 11.1.7 Thermal Recommendations
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 12.2 文档支持
      1. 12.2.1 相关文档
    3. 12.3 接收文档更新通知
    4. 12.4 社区资源
    5. 12.5 商标
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13机械、封装和可订购信息

6.7 Typical Characteristics

LMG3410R070 LMG3411R070 D010_snosd10.gif
Figure 1. Turn-on Delays vs Drive-Strength Resistor
LMG3410R070 LMG3411R070 IV.gif
Figure 3. IDS - VDS curve
LMG3410R070 LMG3411R070 D011_snosd10.gif
Figure 5. Normalized On Resistance vs Temperature
LMG3410R070 LMG3411R070 D001_snosd10.gif
Figure 7. Output Capacitance
LMG3410R070 LMG3411R070 D009_snosd10.gif
Figure 9. Hard-switched Half-Bridge Turn-On Switching Energy vs Slew Rate Resistor
LMG3410R070 LMG3411R070 D002_snosd10.gif
Figure 2. Drain Slew Rate vs Drive-Strength Resistor
LMG3410R070 LMG3411R070 D004_snosd10.gif
Figure 4. Source-Drain Voltage in 3rd Quadrant Operation
LMG3410R070 LMG3411R070 D005_snosd10.gif
Figure 6. VDD Supply Current vs Switching Frequency
LMG3410R070 LMG3411R070 D008_snosd10.gif
Figure 8. Hard-switched Half-Bridge Turn-on and Turn-off Switching Energy vs Drain Current
LMG3410R070 LMG3411R070 D012-RDRVvsBlank-snosd10.gif
Figure 10. RDRV vs Blanking Time
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