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ZHCSIP2E April 2016 – October 2018 LMG3410R070 , LMG3411R070

PRODUCTION DATA.

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
V _DS	Drain-Source Voltage		600	V
V_DS,tr⁽²⁾	Transient Drain-Source Voltage		800	V
V _DD	Supply Voltage	–0.3	20	V
I _DS,pul⁽³⁾	Drain-Source Current, Pulsed		100	A
I_DS⁽⁴⁾	Continous drain current @T_j=25℃		40
I_DS⁽⁴⁾	Continous drain current @T_j=100℃		30	A
V _IN	IN, LPM Pin Voltage	-0.3	5.5	V
V _FAULT	FAULT Pin Voltage	–0.3	5.5	V
T _STG	Storage Temperature	–55	150	°C
T _J	Operating Temperature	–40	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) <1% duty cycle, <1us, for 1M pulses

(3) Pulse current <100ns

(4) The current is the drain current of GaN transistor only. Power stage current is clamped by integrated OCP. Please refer to the OCP thresholds in Electrical Characteristics section.