ZHCSIU6F September   2018  – June 2021 TPS2663

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Hot Plug-In and In-Rush Current Control
        1. 9.3.1.1 Thermal Regulation Loop
      2. 9.3.2  PGOOD and PGTH
        1. 9.3.2.1 PGTH as VOUT Sensing Input
      3. 9.3.3  Undervoltage Lockout (UVLO)
      4. 9.3.4  Overvoltage Protection (OVP)
      5. 9.3.5  Input Reverse Polarity Protection (B_GATE, DRV)
      6. 9.3.6  Reverse Current Protection
      7. 9.3.7  Overload and Short Circuit Protection
        1. 9.3.7.1 Overload Protection
          1. 9.3.7.1.1 Active Current Limiting at 1x IOL, (TPS26630 and TPS26632 Only)
          2. 9.3.7.1.2 Active Current Limiting with 2x IOL Pulse Current Support, (TPS26631, TPS26633, TPS26635 and TPS26636 Only)
        2. 9.3.7.2 Short Circuit Protection
          1. 9.3.7.2.1 Start-Up With Short-Circuit On Output
      8. 9.3.8  Output Power Limiting, PLIM (TPS26632, TPS26633, TPS26635 and TPS26636 Only)
      9. 9.3.9  Current Monitoring Output (IMON)
      10. 9.3.10 FAULT Response ( FLT)
      11. 9.3.11 IN_SYS, IN, OUT and GND Pins
      12. 9.3.12 Thermal Shutdown
      13. 9.3.13 Low Current Shutdown Control (SHDN)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application: Power Path Protection in a PLC System
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Programming the Current-Limit Threshold—R(ILIM) Selection
        2. 10.2.2.2 Undervoltage Lockout and Overvoltage Set Point
        3. 10.2.2.3 Output Buffer Capacitor – COUT
        4. 10.2.2.4 PGTH Set Point
        5. 10.2.2.5 Setting Output Voltage Ramp Time—(tdVdT)
          1. 10.2.2.5.1 Support Component Selections— RPGOOD and C(IN)
        6. 10.2.2.6 Selecting Q1, Q2 and TVS Clamp for Surge Protection
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 Simple 24-V Power Supply Path Protection
      2. 10.3.2 Priority Power MUX Operation
      3. 10.3.3 Input Protection for a Compact 24-V Auxiliary Power Supply for Servo Drives
    4. 10.4 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Transient Protection
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 接收文档更新通知
    3. 13.3 支持资源
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 术语表
  14. 14Mechanical, Packaging, and Orderable Information

9.3.1.1 Thermal Regulation Loop

The average power dissipation within the eFuse during power up with a capacitive load can be calculated using Equation 3.

Equation 3. GUID-17DC2D5C-D336-455C-BAF4-C0C9C59CDF21-low.gif

System designs requiring to charge large output capacitors rapidly may result in an operating point that exceeds the power dissipation versus time boundary limits of the device defined by Figure 7-18 characteristic curve. This may result in increase in junction temperature beyond the device's maximum allowed junction temperature. To keep the junction temperature within the operating range, the thermal regulation control loop regulates the junction temperature at T(J_REG), 145°C (typical) by controlling the inrush current profile and thereby limiting the power dissipation within the device automatically. An internal 2.5 seconds (typical) timer starts from the instance the thermal regulation operation kicks in. If the output does not power up within this time then the internal FET is turned OFF. Subsequent operation of the device depends on the MODE configuration (Auto-Retry or latch OFF) setting as shown in Table 9-1. The maximum time-out of 1.25 seconds (typical) in thermal regulation loop operation ensures that the device and the system board does not heat up during steady fault conditions such as wake up with output short-circuit. This scheme ensures reliable power up operation.

Thermal regulation control loop is internally enabled during power up by V(IN), UVLO cycling and turn ON using SHDN control. Figure 8-2 illustrates performance of the device operating in thermal regulation loop during power up by V(IN) with a large output capacitor. The Thermal regulation loop gets disabled internally after the power up sequence when the internal FET's gate gets fully enhanced or when the t(Treg_timeout) of 2.5 seconds (typical) time is elapsed.

GUID-E370DD4F-EA23-4187-B681-B9E70DB8EED5-low.gif
CdVdT = OpenCOUT = 30 mFRILIM = 4.02 kΩ
Figure 9-2 Thermal Regulation Loop Response During Power Up with Large Capacitive Load
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |