ZHCSIZ5E October 2018 – June 2021 IWR6443 , IWR6843
PRODUCTION DATA
Table 8-1 describes the four rails from an external power supply block of the IWR6843 device.
SUPPLY | DEVICE BLOCKS POWERED FROM THE SUPPLY | RELEVANT IOS IN THE DEVICE |
---|---|---|
1.8 V | Synthesizer and APLL VCOs, crystal oscillator, IF Amplifier stages, ADC, LVDS | Input: VIN_18VCO, VIN18CLK, VIN_18BB, VIOIN_18DIFF, VIOIN_18 LDO Output: VOUT_14SYNTH, VOUT_14APLL |
1.3 V (or 1 V in internal LDO bypass mode)(1) | Power Amplifier, Low Noise Amplifier, Mixers and LO Distribution | Input: VIN_13RF2, VIN_13RF1 LDO Output: VOUT_PA |
3.3 V (or 1.8 V for 1.8 V I/O mode) | Digital I/Os | Input VIOIN |
1.2 V | Core Digital and SRAMs | Input: VDDIN, VIN_SRAM |
The 1.3-V (1.0 V) and 1.8-V power supply ripple specifications mentioned in Table 8-2 are defined to meet a target spur level of –105 dBc (RF Pin = –15 dBm) at the RX. The spur and ripple levels have a dB-to-dB relationship, for example, a 1-dB increase in supply ripple leads to a ~1 dB increase in spur level. Values quoted are rms levels for a sinusoidal input applied at the specified frequency.
FREQUENCY (kHz) | RF RAIL | VCO/IF RAIL | |
---|---|---|---|
1.0 V (INTERNAL LDO BYPASS) (µVRMS) | 1.3 V (µVRMS) | 1.8 V (µVRMS) | |
137.5 | 7 | 648 | 83 |
275 | 5 | 76 | 21 |
550 | 3 | 22 | 11 |
1100 | 2 | 4 | 6 |
2200 | 11 | 82 | 13 |
4400 | 13 | 93 | 19 |
6600 | 22 | 117 | 29 |