米6体育平台手机版

ZHCSJ24A November 2018 – May 2019 TPS56339

PRODUCTION DATA.

6.5 Electrical Characteristics

Limits apply over the recommended operating junction temperature (T_J ) range of –40°C to +125°C, unless otherwise stated. Minimum and maximum limits are specified through test, design or statistical correlation. Typical values represent the most likely parametric norm at T_J = 25 °C, and are provided for reference purposes only. Unless otherwise stated, the following conditions apply: V_IN = 4.5 V to 24 V.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
POWER SUPPLY (VIN PIN)
V_IN	Operation input voltage		4.5		24	V
I_Q	Non switching quiescent current	First power on with no load, then force V_FB to 1.2 V, V_IN = 12 V		98		µA
I_SHDN	Shutdown supply current	V_IN = 12 V, V_EN= 0 V		3		µA
VIN_UVLO	Undervoltage lockout thresholds	VIN Rising threshold	3.9	4.2	4.4	V
VIN_UVLO	Undervoltage lockout thresholds	VIN Falling threshold	3.5	3.7	3.9	V
ENABLE (EN PIN)
V_{EN_RISE}	Enable threshold	EN rising threshold		1.18	1.28	V
V_{EN_FALL}	Enable threshold	EN falling threshold	1.08	1.12		V
I_{EN_INPUT}	Input current	V_EN = 1.0 V		1.2		µA
I_{EN_HYS}	Hysteresis current	V_EN = 1.5 V		3.1		µA
VOLTAGE REFERENCE (FB PIN)
V_REF	Reference voltage	T_J = 25 °C	0.790	0.802	0.814	V
V_REF	Reference voltage	T_J = -40 °C to 125 °C	0.782	0.802	0.822	V
INTEGRATED MOSFETS
R_{DS_ON_HS}	High-side MOSFET On-resistance	T_J= 25 °C, V_BOOT-SW = 5 V		70		mΩ
R_{DS_ON_LS}	Low-side MOSFET On-resistance	T_J= 25 °C, V_IN= 12 V		35		mΩ
CURRENT LIMIT
I_{HS_LIMIT}	High-side MOSFET current limit		3.9	4.7	5.4	A
I_{LS_LIMIT}	Low-side MOSFET current limit	V_IN = 12 V	2.7	3.6	4.7	A
OUTPUT UNDERVOLTAGE PROTECTION
V_{UVP_HYS}	Output UVP threshold	Hiccup detect (H→L)		62.5		%
V_{UVP_HYS}	Hysteresis			5		%
BOOT UVLO
V_BOOT-SW	BOOT UVLO threshold			2.2		V
OSCILLATOR
f_SW	Switching frequency		420	500	600	KHz
THERMAL SHUTDOWN
T_SHDN⁽¹⁾	Thermal shutdown threshold			160		°C
T_HYS⁽¹⁾	Hysteresis			20		°C

(1) Not production tested