米6体育平台手机版

ZHCSJD3C july 2018 – april 2023 BQ25150

PRODUCTION DATA

8.5 Electrical Characteristics

V_IN = 5V, V_BAT = 3.6V. -40°C < T_J < 125°C unless otherwise noted. Typical data at T_J = 25°C

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT CURRENTS
I_IN	Input supply current	PMID_MODE= 01, V_IN = 5V, V_BAT = 3.6V			500	µA
I_IN	Input supply current	0°C <T_J < 85°C , V_IN = 5V, V_BAT = 3.6V Charge Disabled		0.78	1.5	mA
I_{BAT_SHIP}	Battery Discharge Current in Ship Mode	0°C <T_J < 60°C ,V_IN = 0V , V_BAT = 3.6V		10	150	nA
I_{BAT_LP}	Battery Quiescent Current in Low-power Mode	0°C <T_J < 60°C ,V_IN = 0V , V_BAT = 3.6V, LDO Disabled		0.46	1.2	µA
I_{BAT_LP}	Battery Quiescent Current in Low-power Mode	0°C <T_J < 60°C ,V_IN = 0V , V_BAT = 3.6V, LDO Enabled		1.7	3.5	µA
I_{BAT_ACTIVE}	Battery Quiescent Current in Active Mode	0°C <T_J < 85°C ,V_IN = 0V , V_BAT = 3.6V, LDO Disabled		18	25	µA
I_{BAT_ACTIVE}	Battery Quiescent Current in Active Mode	0°C <T_J < 85°C ,V_IN = 0V , V_BAT = 3.6V, LDO Enabled		21	27	µA
POWER PATH MANAGEMENT AND INPUT CURRENT LIMIT
R_ON(IN-PMID)	Input FET ON resistance	I_ILIM = 500mA (ILIM = 110), V_IN = 5V, I_IN = 150mA		280	520	mΩ
V_BSUP1	Enter supplements mode threshold	V_BAT > V_BATUVLO,		V_PMID < V_BAT – 40mV		mV
V_BSUP2	Exit supplements mode threshold	V_BAT > V_BATUVLO		V_PMID < V_BAT – 20mV		mV
I_ILIM	Input Current Limit	Programmable Range	50		600	mA
		I_ILIM = 50mA		45	50	mA
		I_ILIM = 100mA		90	100	mA
		I_ILIM = 150mA		135	150	mA
		I_ILIM = 500mA		450	500	mA
V_{IN_DPM}	Input DPM voltage threshold where current in reduced	Programmable Range	4.2		4.9	V
V_{IN_DPM}	Accuracy		–3		3	%
BATTERY CHARGER
V_DPPM	PMID voltage threshold when charge current is reduced	V_PMID - V_BAT		200		mV
R_ON(BAT-PMID)	Battery Discharge FET On Resistance	V_BAT = 4.35V, I_BAT = 100mA		100	135	mΩ
V_BATREG	Charge Voltage	Programmable charge voltage range	3.6		4.6	V
V_BATREG	Voltage Regulation Accuracy	T_J = 25°C	0.5		0.5	%
I_CHARGE	Fast Charge Programmable Current Range	V_LOWV < V_BAT < V_BATREG	1.25		500	mA
I_CHARGE	Fast Charge Current Accuracy	T_J = 25°C, I_CHARGE > 5mA	–5		5	%
I_PRECHARGE	Precharge current	Precharge current programmable range	1.25		77.5	mA
I_PRECHARGE	Precharge Current Accuracy	-40°C < T_J < 85°C	–10		10	%
I_TERM	Termination Charge Current	Termination Current Programmable Range	1		31	%
	Accuracy	T_J = 25°C, I_TERM = 10% I_CHARGE, I_CHARGE = 100mA	–5⁽¹⁾		5⁽¹⁾	%
	Accuracy	-10°C < T_J < 85°C, I_TERM = 10% I_CHARGE, I_CHARGE = 100mA	–10⁽¹⁾		10⁽¹⁾	%
V_LOWV	Programmable voltage threshold for pre-charge to fast charge transitions	VBAT rising. Programmable Range	2.8		3	V
V_SHORT	Battery voltage threshold for short detection	VBAT falling, VIN = 5V	2.41	2.54	2.67	V
I_SHORT	Charge Current in Battery Short Condition	V_BAT < V_SHORT		I_PRECHARGE		mA
V_RCH	Recharge Threshold voltage	V_BAT falling, V_BATREG = 4.2V, V_RCH = 140mV setting		140		mV
V_RCH		V_BAT falling, V_BATREG = 4.2V, V_RCH = 200mV setting		200		mV
R_{PMID_PD}	PMID pull-down resistance	V_PMID = 3.6V		25		Ω
VDD
V_DD	VDD LDO output voltage	V_BAT = 3.6V, V_IN = 0V, 0 < I_{LOAD_VDD} < 10mA		1.8		V
I_{LOAD_VDD}	Maximum VDD External load capability	V_PMID > 3V			10	mA
LS/LDO
V_INLS	Input voltage range for Load switch Mode		0.8		5.5	V
V_INLS	Input voltage range for LDO Mode		2.2 or V_LDO + 500mV		5.5	V
V_LDO	LDO propgrammable output voltage rnage		0.6		3.7	V
	LDO output accuracy	T_J = 25°C	–2		2	%
	LDO output accuracy	V_LDO = 1.8V, V_INLS =3.6V. I_LOAD = 1mA	–3		3	%
ΔV_OUT/ΔI_OUT	DC Load Regulation	0°C < T_J < 85°C, 1 mA < I_OUT < 150mA, V_LDO = 1.8V		1.2		%
ΔV_OUT/ΔV_IN	DC Line Regulation	0°C < T_J < 85°C, Over V_INLS range, I_OUT = 100mA, V_LDO = 1.8V		0.5		%
R_{DOSN_LDO}	Switch On resistance	V_INLS = 3.6V		250	450	mΩ
R_{DSCH_LSLDO}	Discharge FET On-resistance for LS	V_INLS = 3.6V		40		Ω
I_{OCL_LDO}	Output Current Limit	V_LS/LDO = 0V	200	300		mA
I_{IN_LDO}	LDO VINLS quiescent current in LDO mode	V_BAT = V_INLS=3.6V		0.9		µA
I_{IN_LDO}	OFF State Supply Current	V_BAT = V_INLS=3.6V		0.25		µA
ADC
Resolution	Bits reported by ADC			16		Bits
t_{ADC_CONV}	Conversion-time	ADC_SPEED = 00		24		ms
		ADC_SPEED = 01		12		ms
		ADC_SPEED = 10		6		ms
		ADC_SPEED = 11		3		ms
Resolution	Effective Resolution	ADC_SPEED = 00		12		Bits
		ADC_SPEED = 10		10		Bits
Accuracy	ADC TS Accuracy	ADC_SPEED = 00, V_TS = 0.4V, -10°C < T_J < 85°C	–1⁽¹⁾.		1⁽¹⁾	%
	ADC ADCIN Accuracy	ADC_SPEED = 00, V_ADCIN = 0.4V, -10°C < T_J < 85°C	–1⁽¹⁾		1⁽¹⁾	%
	ADC VBAT Accuracy	ADC_SPEED = 00, V_BAT = 4.2V, -10°C < T_J < 85°C	–0.4		0.4	%
BATTERY PACK NTC MONITOR
V_HOT	High temperature threshold	V_TS falling, -10°C < T_J < 85°C	0.182⁽¹⁾	0.185	0.189⁽¹⁾	V
V_WARM	Warm temperature threshold	V_TS falling, -10°C < T_J < 85°C	0.262⁽¹⁾	0.265	0.268⁽¹⁾	V
V_COOL	Cool temperature threshold	V_TS rising, -10°C < T_J < 85°C	0.510⁽¹⁾	0.514	0.518⁽¹⁾	V
V_COLD	Cold temperature threshold	V_TS rising, -10°C < T_J < 85°C	0.581⁽¹⁾	0.585	0.589⁽¹⁾	V
V_OPEN	TS Open threshold	V_TS rising, -10°C < T_J < 85°C		0.9		V
V_HYS	Threshold hysteresis			4.7		mV
I_{TS_BIAS}	TS bias current	-10°C < T_J < 85°C	78.4	80	81.6	µA
PROTECTION
V_UVLO	IN active threshold voltage	V_IN rising		3.4		V
V_UVLO	IN active threshold voltage	V_IN falling		3.25		V
V_BATUVLO	Battery undervoltage Lockout Threhshold Voltage	Programmable range, 150 mV Hysteresis	2.4		3	V
	Accuracy		–3		3	%
	Battery undervoltage Lockout Threhshold Voltage at Power Up	V_BAT rising, V_IN = 0V, T_J = 25°C		3.15		V
V_{SLP_ENTRY}	Sleep Entry Threshold (V_IN - V_BAT)	2.0V < V_BAT < V_BATREG, V_IN falling		80		mV
V_{SLP_EXIT}	Sleep Exit Threshold (V_IN - V_BAT)	2.0V < V_BAT < V_BATREG		130		mV
V_OVP	Input Supply Over Voltage Threshold	V_IN rising	5.35	5.5	5.8	V
V_OVP	Input Supply Over Voltage Threshold	V_IN falling (125mV hysteresis)		5.4		V
I_{BAT_OCP}	Batery Over Current Threshold Programmable range	I_{BAT_OCP} increasing	1200		1600	mA
I_{BAT_OCP}	Current Limit Accuracy		–30		30	%
T_SHUTDOWN	Thermal shutdown trip point			125		°C
T_HYS	Thermal shutdown trip point hysteresis			15		°C
I²C INTERFACE (SCL and SDA)
I2C Frequency			100		400	kHz
V_IL	Input Low threshold level	V_PULLUP = V_IO = 1.8V			0.25 * V_IO	V
V_IH	Input High Threshold level	V_PULLUP = V_IO = 1.8V	0.75 * V_IO			V
V_OL	Output Low threshold level	V_PULLUP = V_IO = 1.8V, I_LOAD = 5mA			0.25 * V_IO	V
I_LKG	High-level leakage Current	V_PULLUP = V_IO = 1.8V			1	µA
/MR INPUT
R_PU	Internal pull up resistance		90	125	170	kΩ
V_IL	/MR Input Low threshold level	V_BAT > V_BUVLO			0.3	V
/INT, /PG OUTPUTS
V_OL	Output Low threshold level	V_PULLUP = V_IO = 1.8V, I_LOAD = 5mA			0.25 * V_IO	V
I_LKG	/INT Hi level leakage Current	High Impedance, V_PULLUP = V_IO = 1.8V			1	µA
/CE, /LP INPUTS
R_PDOWN	/CE pull down resistance			900		kΩ
V_IL	Input Low threshold level	V_IO = 1.8V			0.45	V
V_IH	/CE Input High Threshold level	V_IO = 1.8V	1.35			V

(1) Based on Characterization Data