ZHCSJF9A March 2019 – June 2019 LMG3410R150 , LMG3411R150
ADVANCE INFORMATION for pre-production products; subject to change without notice.
In some applications such as boost converter, the low side LMG341xR150 may need to start switching at high frequency while high side LMG341xR150 is not fully biased. If low side GaN device turn-on speed is adjusted to achieve high slew rate, the high side GaN device can turn-on unintentionally as high dv/dt can charge high side GaN device drain to source capacitance. For reliable operation, the slew rate should be slowed down to 30 V/ns by changing the resistance of RDRV pin of the low side LMG341xR150 until high side LMG341xR150's bias is fully settled. This can be monitored through the FAULT output of high side LMG341xR150.