ZHCSJF9A March 2019 – June 2019 LMG3410R150 , LMG3411R150
ADVANCE INFORMATION for pre-production products; subject to change without notice.
The layout of the LMG341xR150 is critical to its performance and functionality. Because the half-bridge configuration is typically used with these GaN devices, layout recommendations will be considered with this configuration. A four-layer or higher layer count board is required to reduce the parasitic inductances of the layout to achieve suitable performance.