ZHCSK77E September   2009  – July 2024 TS3USB221E

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Dynamic Electrical Characteristics, VCC = 3.3 V ±10%
    7. 5.7  Dynamic Electrical Characteristics, VCC = 2.5 V ±10%
    8. 5.8  Switching Characteristics, VCC = 3.3 V ±10%
    9. 5.9  Switching Characteristics, VCC = 2.5 V ±10%
    10. 5.10 Typical Characteristics
  7.   Parameter Measurement Information
  8. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Low Power Mode
    4. 6.4 Device Functional Modes
  9. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 接收文档更新通知
    3. 8.3 支持资源
    4. 8.4 Trademarks
    5. 8.5 静电放电警告
    6. 8.6 术语表
  11. Revision History
  12. 10Mechanical, Packaging, and Orderable Information

ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)I/O pins to GND±12000V
Pins GND, OE, S and VCC±7000
Contact discharge (IEC 61000-4-2)I/O pins to GND±7000
Charged-device model (CDM), per JEDEC specification JESD-002(2)±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.