米6体育平台手机版

ZHCSK90D september 2019 – january 2021 UCC12050

PRODUCTION DATA

6.9 Electrical Characteristics

Over operating temperature range (T_J = –40°C to 150°C), V_INP = 4.5V to 5.5V, C_INP = C_OUT = 10 µF, SEL connected to V_ISO, internal clock mode, unless otherwise noted. All typical values at T_J = 25°C and V_INP = 5.0V.

	PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT SUPPLY
I_VINQ	VINP quiescent current,disabled	EN=LOW			100	uA
I_VINO	VINP operating current, no load	EN=HI; SEL shorted to VISO (5.0V output)		50		mA
		EN=HI; SEL 100kΩ to VISO (5.4V output)		45
		EN=HI; SEL shorted to GNDS (3.3V output)		90
		EN=HI; SEL 100kΩ to GNDS (3.7V output)		80
I_{VIN_SC}	DC current from VINP supplyunder short circuit on VISO	VISO short to GNDS		245		mA
V_UVPR	VINP under-voltage lockout rising threshold			4.2		V
V_UVPF	VINP under-voltage lockout falling threshold			3.7		V
V_UVPH	VINP under-voltage lockout hysteresis			0.5		V
EN, SYNC INPUT PINS
V_IR	Input voltage threshold, logic HIGH	Rising edge			2.2	V
V_IF	Input voltage threshold, logic LOW	Falling edge	0.8			V
I_EN	Enable Pin Input Current	V_EN= 5.0 V		5	10	uA
I_SYNC	SYNC Pin Input Current	V_SYNC= 5.0 V		0.02	1	uA
SYNC_OK PIN
V_OL	SYNC_OK output low voltage	I_{SYNC_OK} = - 2 mA		0.15		V
I_{LKG_SYNC_OK}	SYNC_OK pin leakage current	V_{SYNC_OK} = 5.0 V			1	uA
DC/DC CONVERTER
V_ISO	Isolated supply output voltage	SEL shorted to VISO (5.0V output); I_ISO = 55 mA ⁽²⁾	4.7	5	5.3	V
		SEL 100kΩ to VISO (5.4 V output); I_ISO = 45 mA ⁽²⁾	5.1	5.4	5.7	V
		SEL shorted to GNDS (3.3V output); I_ISO = 100 mA ⁽²⁾	3.1	3.3	3.5	V
		SEL 100kΩ to GNDS (3.7 V output); I_ISO = 90 mA ⁽²⁾	3.5	3.7	3.9	V
V_ISO(RIP)	Voltage ripple on isolated supply output (pk-pk)	20-MHz bandwidth, CLOAD = 10 uF \|\| 0.1 uF, SEL shorted to VISO (5.0V output); I_ISO = 100 mA		50		mV
		20-MHz bandwidth, CLOAD = 10 uF \|\| 0.1 uF, SEL 100kΩ to VISO (5.4V output); I_ISO = 90 mA		50		mV
		20-MHz bandwidth, CLOAD = 10 uF \|\| 0.1 uF, SEL shorted to GNDS (3.3V output); I_ISO = 145 mA		50		mV
		20-MHz bandwidth, CLOAD = 10 uF \|\| 0.1 uF, SEL shorted to GNDS (3.7V output); I_ISO = 130 mA		50		mV
V_ISO(LINE)	V_ISO DC line regulation	SEL shorted to VISO (5.0 V output); I_ISO = 50 mA, VINP = 4.5 V to 5.5 V		1%
V_ISO(LINE)	V_ISO DC line regulation	SEL shorted to GNDS (3.3 V output); I_ISO = 75 mA, VINP = 4.5 V to 5.5 V		1%
V_ISO(LOAD)	V_ISO DC load regulation	SEL shorted to VISO (5.0 V output); I_ISO = 0 to 100 mA		1.5%
V_ISO(LOAD)	V_ISO DC load regulation	SEL shorted to GNDS (3.3 V output); I_ISO = 0 to 145 mA		1.5%
EFF	Efficiency at maximum recommended load ⁽¹⁾	SEL shorted to VISO (5.0 V output); I_ISO = 100 mA		60%
		SEL 100kΩ to VISO (5.4V output); I_ISO = 90 mA		60%
		SEL shorted to GNDS (3.3V output); I_ISO = 145 mA		50%
		SEL 100kΩ to GNDS (3.7V output); I_ISO = 130 mA		53%
t_RISE	VISO rise time, 10% - 90%	EN = change from LO to HI, SEL shorted to VISO (5.0V output); I_ISO = 1 mA		750		µs
t_RISE	VISO rise time, 10% - 90%	EN = change from LO to HI, SEL 100kΩ to GNDS (3.3V output); I_ISO = 1 mA		300		µs
THERMAL SHUTDOWN
TSD_THR	Thermal shutdown threshold	Junction Temperature, Rising		165		°C
TSD_HYST	Thermal shutdown hysteresis	Junction Temperature, Falling		27		°C

(1) Efficiency calculation: EFF = (V_ISO x I_ISO) / (V_INP x I_INP)

(2) See the Section 7.3.3 section for discussion of V_ISO regulation across load and temperature conditions for all output voltage settings.