ZHCSKO8C
June 2021 – January 2022
UCC27614
PRODUCTION DATA
1
特性
2
应用
3
说明
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Timing Diagrams
6.8
Typical Characteristics
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.3
Feature Description
7.3.1
VDD Undervoltage Lockout
7.3.2
Input Stage
7.3.3
Enable Function
7.3.4
Output Stage
7.4
Device Functional Modes
8
Applications and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Driving MOSFET/IGBT/SiC MOSFET
8.2.1.1
Design Requirements
8.2.1.2
Detailed Design Procedure
8.2.1.2.1
Input-to-Output Configuration
8.2.1.2.2
Input Threshold Type
8.2.1.2.3
VDD Bias Supply Voltage
8.2.1.2.4
Peak Source and Sink Currents
8.2.1.2.5
Enable and Disable Function
8.2.1.2.6
Propagation Delay and Minimum Input Pulse Width
8.2.1.2.7
Power Dissipation
8.2.1.3
Application Curves
9
Power Supply Recommendations
10
Layout
10.1
Layout Guidelines
10.2
Layout Example
10.3
Thermal Consideration
11
Device and Documentation Support
11.1
第三方米6体育平台手机版_好二三四免责声明
11.2
接收文档更新通知
11.3
支持资源
11.4
Trademarks
11.5
Electrostatic Discharge Caution
11.6
术语表
12
Mechanical, Packaging, and Orderable Information
7.2
Functional Block Diagram
Typical
EN/IN- pullup resistance is 200 kΩ and IN/IN+ pulldown resistance is 120 kΩ.
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