ZHCSL06D February 2008 – February 2020 TPS51200
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY CURRENT | ||||||
IIN | Supply current | TA = 25 °C, VEN = 3.3 V, No Load | 0.7 | 1 | mA | |
IIN(SDN) | Shutdown current | TA = 25 °C, VEN = 0 V, VREFIN = 0,
No Load |
65 | 80 | μA | |
TA = 25 °C, VEN = 0 V, VREFIN > 0.4 V, No Load | 200 | 400 | ||||
ILDOIN | Supply current of VLDOIN | TA = 25 °C, VEN = 3.3 V, No Load | 1 | 50 | μA | |
ILDOIN(SDN) | Shutdown current of VLDOIN | TA = 25 °C, VEN = 0 V, No Load | 0.1 | 50 | μA | |
INPUT CURRENT | ||||||
IREFIN | Input current, REFIN | VEN = 3.3 V | 1 | μA | ||
VO OUTPUT | ||||||
VVOSNS | Output DC voltage, VO | VREFOUT = 1.25 V (DDR1), IO = 0 A | 1.25 | V | ||
–15 | 15 | mV | ||||
VREFOUT = 0.9 V (DDR2), IO = 0 A | 0.9 | V | ||||
–15 | 15 | mV | ||||
VREFOUT = 0.75 V (DDR3), IO = 0 A | 0.75 | V | ||||
–15 | 15 | mV | ||||
VREFOUT = 0.675 V (DDR3L), IO = 0 A | 0.675 | V | ||||
–15 | 15 | mV | ||||
VREFOUT = 0.6 V (DDR4), IO = 0 A | 0.6 | V | ||||
–15 | 15 | mV | ||||
VVOTOL | Output voltage tolerance to REFOUT | –2 A < IVO < 2 A | –25 | 25 | mV | |
IVOSRCL | VO source current Limit | With reference to REFOUT,
VOSNS = 90% × VREFOUT |
3 | 4.5 | A | |
IVOSNCL | VO sink current Limit | With reference to REFOUT,
VOSNS = 110% × VREFOUT |
3.5 | 5.5 | A | |
IDSCHRG | Discharge current, VO | VREFIN = 0 V, VVO = 0.3 V, VEN = 0 V, TA = 25°C | 18 | 25 | Ω | |
POWERGOOD COMPARATOR | ||||||
VTH(PG) | VO PGOOD threshold | PGOOD window lower threshold with respect to REFOUT | –23.5% | –20% | –17.5% | |
PGOOD window upper threshold with respect to REFOUT | 17.5% | 20% | 23.5% | |||
PGOOD hysteresis | 5% | |||||
tPGSTUPDLY | PGOOD start-up delay | Start-up rising edge, VOSNS within 15% of REFOUT | 2 | ms | ||
VPGOODLOW | Output low voltage | ISINK = 4 mA | 0.4 | V | ||
tPBADDLY | PGOOD bad delay | VOSNS is outside of the ±20% PGOOD window | 10 | μs | ||
IPGOODLK | Leakage current(1) | VOSNS = VREFIN (PGOOD high impedance), VPGOOD = VVIN + 0.2 V | 1 | μA | ||
REFIN AND REFOUT | ||||||
VREFIN | REFIN voltage range | 0.5 | 1.8 | V | ||
VREFINUVLO | REFIN undervoltage lockout | REFIN rising | 360 | 390 | 420 | mV |
VREFINUVHYS | REFIN undervoltage lockout hysteresis | 20 | mV | |||
VREFOUT | REFOUT voltage | REFIN | V | |||
VREFOUTTOL | REFOUT voltage tolerance to VREFIN | –1 mA < IREFOUT < 1 mA,
VREFIN = 1.25 V |
–12 | 12 | mV | |
–1 mA < IREFOUT < 1 mA,
VREFIN = 0.9 V |
–12 | 12 | ||||
–1 mA < IREFOUT < 1 mA,
VREFIN = 0.75 V |
–12 | 12 | ||||
–1 mA < IREFOUT < 1 mA,
VREFIN = 0.675 V |
–12 | 12 | ||||
–1 mA < IREFOUT < 1 mA,
VREFIN = 0.6 V |
–12 | 12 | ||||
IREFOUTSRCL | REFOUT source current limit | VREFOUT = 0 V | 10 | 40 | mA | |
IREFOUTSNCL | REFOUT sink current limit | VREFOUT = 0 V | 10 | 40 | mA | |
UVLO AND EN LOGIC THRESHOLD | ||||||
VVINUVVIN | UVLO threshold | Wake up, TA = 25°C | 2.2 | 2.3 | 2.375 | V |
Hysteresis | 50 | mV | ||||
VENIH | High-level input voltage | Enable | 1.7 | V | ||
VENIL | Low-level input voltage | Enable | 0.3 | |||
VENYST | Hysteresis voltage | Enable | 0.5 | |||
IENLEAK | Logic input leakage current | EN, TA = 25°C | –1 | 1 | μA | |
THERMAL SHUTDOWN | ||||||
TSON | Thermal shutdown threshold(1) | Shutdown temperature | 150 | °C | ||
Hysteresis | 25 |