ZHCSL06D February   2008  – February 2020 TPS51200

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化的 DDR 应用
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Sink and Source Regulator (VO Pin)
      2. 7.3.2  Reference Input (REFIN Pin)
      3. 7.3.3  Reference Output (REFOUT Pin)
      4. 7.3.4  Soft-Start Sequencing
      5. 7.3.5  Enable Control (EN Pin)
      6. 7.3.6  Powergood Function (PGOOD Pin)
      7. 7.3.7  Current Protection (VO Pin)
      8. 7.3.8  UVLO Protection (VIN Pin)
      9. 7.3.9  Thermal Shutdown
      10. 7.3.10 Tracking Start-up and Shutdown
      11. 7.3.11 Output Tolerance Consideration for VTT DIMM Applications
      12. 7.3.12 REFOUT (VREF) Consideration for DDR2 Applications
    4. 7.4 Device Functional Modes
      1. 7.4.1 Low Input Voltage Applications
      2. 7.4.2 S3 and Pseudo-S5 Support
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Voltage Capacitor
        2. 8.2.2.2 VLDO Input Capacitor
        3. 8.2.2.3 Output Capacitor
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
      1. 8.3.1 3.3-VIN, DDR2 Configuration
      2. 8.3.2 2.5-VIN, DDR3 Configuration
      3. 8.3.3 3.3-VIN, LP DDR3 or DDR4 Configuration
      4. 8.3.4 3.3-VIN, DDR3 Tracking Configuration
      5. 8.3.5 3.3-VIN, LDO Configuration
      6. 8.3.6 3.3-VIN, DDR3 Configuration with LFP
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Design Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 11.1.2 开发支持
        1. 11.1.2.1 评估模块
        2. 11.1.2.2 Spice 模型
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

8.3.6 3.3-VIN, DDR3 Configuration with LFP

This design example describes a 3.3-VIN, DDR3 configuration with LFP application.

TPS51200 v08034_lus812.gifFigure 33. 3.3-VIN, DDR3 Configuration with LFP

Table 8. 3.3-VIN, DDR3 Configuration with LFP List of Materials

REFERENCE DESIGNATOR DESCRIPTION SPECIFICATION PART NUMBER MANUFACTURER
R1, R2 Resistor 10 kΩ
R3 100 kΩ
R4(1)
C1, C2, C3 Capacitor 10 μF, 6.3 V GRM21BR70J106KE76L Murata
C4 1000 pF
C5 0.1 μF
C6 4.7 μF, 6.3 V GRM21BR60J475KA11L Murata
C7, C8 10 μF, 6.3 V GRM21BR70J106KE76L Murata
C9(1)
(1) Choose values for R4 and C9 to reduce the parasitic effect of the trace (between VO and the output MLCCs) and the output capacitors (ESR and ESL).
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