米6体育平台手机版

ZHCSLC3B may 2020 – april 2023 TPD3S713-Q1 , TPD3S713A-Q1

PRODUCTION DATA

6.7 Typical Characteristics

T_A = 25°C, V_(IN) = 5 V, V_(EN) = V_(IN), V_{(ILIM_SEL)} = V_(INT1) = V_(IN), V_(INT2) = GND, FAULT connect to V_(IN) via a 10-kΩ pullup resistor (unless stated otherwise)

V_(IN) = 5 V

Figure 6-1 Power Switch On-Resistance vs Temperature

Figure 6-3 BUS Discharge Resistance (OVP) vs Temperature

V_(IN) = 5 V

Figure 6-5 VBUS Short-Circuit Current Limit vs Temperature

ILIM_SEL = High

Figure 6-7 Enabled IN Supply Current vs Temperature

V_(IN) = 5 V

Figure 6-9 BUS Overvoltage Protection Threshold vs Temperature

V_IN = 5.5 V

I_BUS = 0.5 A

Figure 6-11 I_(CS) vs V_(CS) Voltage

V_IN = 4.5 V

I_BUS = 0.5 A

Figure 6-13 I_(IMON) vs V_(CS) Voltage

V_(OUT) = 5 V

Measure I_(BUS)

Figure 6-2 Reverse Leakage Current vs Temperature

Figure 6-4 BUS Discharge Resistance (Mode Change) vs Temperature

ILIM_SEL = High

Figure 6-6 Disabled IN Supply Current vs Temperature

V_(IN) = 5 V

Figure 6-8 DP_IN Overvoltage Protection Threshold vs Temperature

I_BUS = 0.5 A

V_(CS) = 2.5 V

Figure 6-10 I_(CS) vs Temperature

I_BUS = 0.5 A

V_(IMON) = 2.5 V

Figure 6-12 I_(IMON) vs Temperature

Measured on EVM with 10-cm cable

Figure 6-14 Bypassing the TPD3S713-Q1 Data Switch

R_(LOAD) = 68 Ω

C_(LOAD) = 10 µF

t = 5 ms/div

Figure 6-16 Turn-on Response

R_{(ILIM_LO)} = 80.6 kΩ

t = 5 ms/div

Figure 6-18 Enable Into Short

R_{(ILIM_HI)} = 52.3 kΩ

R(short) = 50 mΩ

t = 5 ms/div

Figure 6-20 Hot Short

t = 20 ms/div

Figure 6-22 VBUS Short-to-Battery Recovery

R_(BIAS) = 5.1 kΩ	t = 20 ms/div

Figure 6-24 DP_IN Short-to-Battery Recovery

R_(BIAS) = 5.1 kΩ	t = 2 ms/div

Figure 6-26 DP_IN Short-to-V_BUS and Recovery

Figure 6-28 Off-State Data-Switch Isolation vs Frequency

Measured on EVM with 10-cm cable

Figure 6-15 Through the TPD3S713-Q1 Data Switch

R_(LOAD) = 68 Ω

C_(LOAD) = 10 µF

t = 5 ms/div

Figure 6-17 Turn-off Response

R_{(ILIM_HI)} = 80.6 kΩ

t = 5 ms/div

Figure 6-19 Short Circuit to No Load

t =5 ms/div

Figure 6-21 VBUS Short-to-Battery

t = 5 ms/div

Figure 6-23 DP_IN Short-to-Battery

R_(BIAS) = 5.1 kΩ	t = 5 ms/div

Figure 6-25 DP_IN Short-to-V_BUS

Figure 6-27 Data Transmission Characteristics vs Frequency

Figure 6-29 On-State Cross-Channel Isolation vs Frequency