ZHCSLL2A May 2021 – March 2022 TPS25830A-Q1 , TPS25832A-Q1
PRODUCTION DATA
The TPS2583xA-Q1 has integrated NFET gate drivers and can support current limit with external NFET. Refer to GUID-A4E3DF06-CF74-42E0-870E-829A84694818.html#T4571372-70.
The LS_GD pin of TPS2583xA-Q1 can source 3-uA (typical) current to enhance the external MOSFET. A 6.2-V clamp between LS_GD and CSN/OUT pin limits the gate-to-source voltage. During DCDC start up, the LS_GD gate drivers begin to source current after VCSN/OUT reach 3 V. If the VCSN/OUT > 7.5 V or VBUS > 7 V under overvoltage condition, the LS_GD will turn off immediately with 35-uA (typical) sink current.
If load current above NFET current limit threshold, LS_GD will also turn off the NFET after 2 ms (typical) and enter hiccup mode to protect NFET from thermal issue. Refer to Figure 11-26 for application waveform.
In real application, if VBUS short to VBAT function is needed, 20-V back-to-back NFET is suggested in circuit design.