ZHCSLO9F July 2020 – July 2024 TMUX7208 , TMUX7209
PRODUCTION DATA
- 1
- 1 特性
- 2 应用
- 3 说明
- 4 Device Comparison Table
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Thermal Information
- 6.4 Recommended Operating Conditions
- 6.5 Source or Drain Continuous Current
- 6.6 ±15 V Dual Supply: Electrical Characteristics
- 6.7 ±15 V Dual Supply: Switching Characteristics
- 6.8 ±20 V Dual Supply: Electrical Characteristics
- 6.9 ±20 V Dual Supply: Switching Characteristics
- 6.10 44 V Single Supply: Electrical Characteristics
- 6.11 44 V Single Supply: Switching Characteristics
- 6.12 12 V Single Supply: Electrical Characteristics
- 6.13 12 V Single Supply: Switching Characteristics
- 6.14 Typical Characteristics
-
7 Parameter Measurement Information
- 7.1 On-Resistance
- 7.2 Off-Leakage Current
- 7.3 On-Leakage Current
- 7.4 Transition Time
- 7.5 tON(EN) and tOFF(EN)
- 7.6 Break-Before-Make
- 7.7 tON (VDD) Time
- 7.8 Propagation Delay
- 7.9 Charge Injection
- 7.10 Off Isolation
- 7.11 Crosstalk
- 7.12 Bandwidth
- 7.13 THD + Noise
- 7.14 Power Supply Rejection Ratio (PSRR)
- 8 Detailed Description
- 9 Application and Implementation
- 10Device and Documentation Support
- 11Revision History
- 12Mechanical, Packaging, and Orderable Information
9.2.3 Application Curve
The low on and off leakage currents of TMUX7208 and ultra-low charge injection performance make this device ideal for implementing high precision industrial systems. The TMUX7208 contains specialized architecture to reduce charge injection on the drain side (D) (see Section 8.3.7 for more details). Figure 9-3 shows the plot for the charge injection versus source voltage for the TMUX7208.
| TA = 25°C |