ZHCSM06C december   2020  – may 2023 TPS272C45

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
    1. 6.1 Recommended Connections for Unused Pins
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SNS Timing Characteristics
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Programmable Current Limit
        1. 9.3.1.1 Inrush Current Handling
        2. 9.3.1.2 Calculating RILIMx
        3. 9.3.1.3 Configuring ILIMx From an MCU
      2. 9.3.2 Low Power Dissipation
      3. 9.3.3 Protection Mechanisms
        1. 9.3.3.1 Short-Circuit Protection
          1. 9.3.3.1.1 VS During Short-to-Ground
        2. 9.3.3.2 Inductive Load Demagnetization
        3. 9.3.3.3 Thermal Shutdown
        4. 9.3.3.4 Undervoltage Lockout on VS (UVLO)
        5. 9.3.3.5 Undervoltage Lockout on Low Voltage Supply (VDD_UVLO)
        6. 9.3.3.6 Power-Up and Power-Down Behavior
        7. 9.3.3.7 Overvoltage Protection (OVPR)
      4. 9.3.4 Diagnostic Mechanisms
        1. 9.3.4.1 Current Sense
          1. 9.3.4.1.1 RSNS Value
            1. 9.3.4.1.1.1 Current Sense Output Filter
        2. 9.3.4.2 Fault Indication
          1. 9.3.4.2.1 Fault Event Diagrams
        3. 9.3.4.3 Short-to-Supply or Open-Load Detection
          1. 9.3.4.3.1 Detection With Switch Enabled
          2. 9.3.4.3.2 Detection With Switch Disabled
        4. 9.3.4.4 Current Sense Resistor Sharing
    4. 9.4 Device Functional Modes
      1. 9.4.1 Off
      2. 9.4.2 Diagnostic
      3. 9.4.3 Active
      4. 9.4.4 Fault
  11. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 IEC 61000-4-5 Surge
      2. 10.1.2 Inverse Current
      3. 10.1.3 Loss of GND
      4. 10.1.4 Paralleling Channels
      5. 10.1.5 Thermal Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 RILIM Calculation
        2. 10.2.2.2 Diagnostics
          1. 10.2.2.2.1 Selecting the RISNS Value
      3. 10.2.3 Application Curves
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
      2. 10.4.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 静电放电警告
    6. 11.6 术语表
  13. 12Mechanical, Packaging, and Orderable Information

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins except VS and OUTx ±2000 V
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) VS and OUTx with respect to GND ±4000 V
V(ESD) Electrostatic discharge Charged device model (CDM), ANSI/ESDA/JEDEC JS-002(2) All pins ±750 V
V(surge) Electrostatic discharge Surge protection with 42 Ω, per IEC 61000-4-5; 1.2/50 μs (3) OUTx pins ±1000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(3) Tested with application circuit and supply voltage (VS) of 24-V, ENx pins High (Output Enabled) and and EN pins Low (Outputs Disabled)
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