ZHCSMD3C June   2020  – August 2022 BQ25792

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. 说明(续)
  6. Device Comparison
  7. Pin Configuration and Functions
  8. Specifications
    1. 8.1 Absolute Maximum Ratings
    2. 8.2 ESD Ratings
    3. 8.3 Recommended Operating Conditions
    4. 8.4 Thermal Information
    5. 8.5 Electrical Characteristics
    6. 8.6 Timing Requirements
    7. 8.7 Typical Characteristics
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Device Power-On-Reset
      2. 9.3.2  PROG Pin Configuration
      3. 9.3.3  Device Power Up from Battery without Input Source
      4. 9.3.4  Device Power Up from Input Source
        1. 9.3.4.1 Power Up REGN LDO
        2. 9.3.4.2 Poor Source Qualification
        3. 9.3.4.3 ILIM_HIZ Pin
        4. 9.3.4.4 Default VINDPM Setting
        5. 9.3.4.5 Input Source Type Detection
          1. 9.3.4.5.1 D+/D– Detection Sets Input Current Limit
          2. 9.3.4.5.2 HVDCP Detection Procedure
          3. 9.3.4.5.3 Connector Fault Detection
      5. 9.3.5  Dual-Input Power Mux
        1. 9.3.5.1 ACDRV Turn On Condition
        2. 9.3.5.2 VBUS Input Only
        3. 9.3.5.3 One ACFET-RBFET
        4. 9.3.5.4 Two ACFETs-RBFETs
      6. 9.3.6  Buck-Boost Converter Operation
        1. 9.3.6.1 Force Input Current Limit Detection
        2. 9.3.6.2 Input Current Optimizer (ICO)
        3. 9.3.6.3 Pulse Frequency Modulation (PFM)
        4. 9.3.6.4 Device HIZ State
      7. 9.3.7  USB On-The-Go (OTG)
        1. 9.3.7.1 OTG Mode to Power External Devices
      8. 9.3.8  Power Path Management
        1. 9.3.8.1 Narrow VDC Architecture
        2. 9.3.8.2 Dynamic Power Management
      9. 9.3.9  Battery Charging Management
        1. 9.3.9.1 Autonomous Charging Cycle
        2. 9.3.9.2 Battery Charging Profile
        3. 9.3.9.3 Charging Termination
        4. 9.3.9.4 Charging Safety Timer
        5. 9.3.9.5 Thermistor Qualification
          1. 9.3.9.5.1 JEITA Guideline Compliance in Charge Mode
          2. 9.3.9.5.2 Cold/Hot Temperature Window in OTG Mode
      10. 9.3.10 Integrated 16-Bit ADC for Monitoring
      11. 9.3.11 Status Outputs ( STAT, and INT)
        1. 9.3.11.1 Charging Status Indicator (STAT Pin)
        2. 9.3.11.2 Interrupt to Host ( INT)
      12. 9.3.12 Ship FET Control
        1. 9.3.12.1 Shutdown Mode
        2. 9.3.12.2 Ship Mode
        3. 9.3.12.3 System Power Reset
      13. 9.3.13 Protections
        1. 9.3.13.1 Voltage and Current Monitoring
        2. 9.3.13.2 Thermal Regulation and Thermal Shutdown
      14. 9.3.14 Serial Interface
        1. 9.3.14.1 Data Validity
        2. 9.3.14.2 START and STOP Conditions
        3. 9.3.14.3 Byte Format
        4. 9.3.14.4 Acknowledge (ACK) and Not Acknowledge (NACK)
        5. 9.3.14.5 Target Address and Data Direction Bit
        6. 9.3.14.6 Single Write and Read
        7. 9.3.14.7 Multi-Write and Multi-Read
    4. 9.4 Device Functional Modes
      1. 9.4.1 Host Mode and Default Mode
      2. 9.4.2 Register Bit Reset
    5. 9.5 Register Map
      1. 9.5.1 I2C Registers
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inductor Selection
        2. 10.2.2.2 Input (VBUS / PMID) Capacitor
        3. 10.2.2.3 Output (VSYS) Capacitor
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 接收文档更新通知
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 术语表
  14. 14Mechanical, Packaging, and Orderable Information

One ACFET-RBFET

In this configuration, only ACFET1-RBFET1 is present, ACFET2-RBFET2 is not. VAC1 is tied to the drain of ACFET1, ACDRV1 is connected to the gates of ACFET1 and RBFET1. VAC2 is shorted to VBUS, ACDRV2 is pulled down to GND. This structure is illustrated in Figure 9-3, which is able to support either single input (one from VAC1 to VBUS through ACFET1-RBFET1) or dual-input (one from VAC1 to VBUS through ACFET1-RBFET1, the other one connected directly to VBUS) applications. At POR, the charger detects only ACFET1-RBFET1 present and configures the power mux register fields as shown in Table 9-6.

GUID-20200925-CA0I-R1CZ-C5CL-FBH17CVTWZQB-low.gif Figure 9-3 One ACFET-RBFET Structure Supporting One Input at VAC1 and/or One Input at VBUS
Table 9-6 Single Input Configuration Summary
PIN OR REGISTER FIELD STATE
External MOSFETs ACFET1 and RBFET1 only
VAC1 Connected to input source 1
VAC2 Shorted to VBUS
ACDRV1 Connected to ACFET1/RBFET1 gate terminals
ACDRV2 Shorted to GND
ACRB1_STAT
0: ACFET1/RBFET1 Open (Path Disabled)
1: ACFET1/RBFET1 Closed (Path Enabled)
ACRB2_STAT 0 (Read Only)
DIS_ACDRV
0: Allow ACDRV1 On if all requirements met
1: Force ACDRV1 Off
EN_ACDRV1
0: Force ACDRV1 Off
1: Turn ACDRV1 On if all requirements met
EN_ACDRV2 Locked at 0

When a valid input is presented at VAC1, the charger will set EN_ACDRV1 = 1 and turn ACFET1-RBFET1 on. To swap from the input at VAC1 to the input at VBUS, the host has to turn off the ACFET1-RBFET1 first by setting DIS_ACDRV=1 (forcing EN_ACDRV1 = 0), then enable the other input source which is connected directly to VBUS. To swap from the input at VBUS to the input at VAC1, the host has to disable the input source connected to VBUS, wait for VBUS to fall below VBUS_PRESENT, then turn on the ACFET1-RBFET1 by setting DIS_ACDRV = 0.