ZHCSN50H november 2007 – april 2023 TPS74701
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
VREF | Internal reference (Adj.) | TA = +25°C | 0.796 | 0.8 | 0.804 | V | ||
ΔVOUT(ΔVIN) | Output voltage range | VIN = 5 V, IOUT = 0.5 A | VREF | 3.6 | V | |||
Accuracy(1) | 2.97 V ≤ VBIAS ≤ 5.5 V, 50 mA ≤ IOUT ≤ 0.5 A | –2 | ±0.5 | 2 | % | |||
ΔVOUT(ΔIOUT) | Line regulation | VOUT(nom) + 0.3 ≤ VIN ≤ 5.5 V | 0.03 | %/V | ||||
VOUT | Load regulation | 50 mA ≤ IOUT ≤ 0.5 A | 0.09 | %/A | ||||
VDO | VIN dropout voltage(2) | IOUT = 0.5 A, VBIAS – VOUT(nom) ≥ 3.25 V(3) | 50 | 120 | mV | |||
VBIAS dropout voltage(2) | IOUT = 0.5 A, VIN = VBIAS | 1.31 | 1.39 | V | ||||
ICL | Output current limit | VOUT = 80% × VOUT(nom) | 800 | 1350 | mA | |||
IBIAS | BIAS pin current | 1 | 2 | mA | ||||
ISHDN | Shutdown supply current (IGND) | VEN ≤ 0.4 V | 1 | 50 | µA | |||
IFB | Feedback pin current | –1 | 0.15 | 1 | µA | |||
PSRR | Power-supply rejection (VIN to VOUT) | 1 kHz, IOUT = 0.5 A, VIN = 1.8 V, VOUT = 1.5 V | 60 | dB | ||||
300 kHz, IOUT = 0.5 A, VIN = 1.8 V, VOUT = 1.5 V | 30 | dB | ||||||
Power-supply rejection (VBIAS to VOUT) | 1 kHz, IOUT = 0.5 A, VIN = 1.8 V, VOUT = 1.5 V | 50 | dB | |||||
300 kHz, IOUT = 0.5 A, VIN = 1.8 V, VOUT = 1.5 V | 30 | dB | ||||||
Vn | Output noise voltage | BW = 100 Hz to 100 kHz, IOUT = 0.5 A, CSS = 1 nF | 25 | μVrms x Vout | ||||
Vn | Output noise voltage | BW = 100 Hz to 100 kHz, IOUT = 0.5 A, CSS = 1 nF | 25 × VOUT | μVrms | ||||
tSTR | Minimum start-up time | RLOAD for IOUT = 0.5 A, CSS = open | 200 | µs | ||||
ISS | Soft-start charging current | VSS = 0.4 V | 440 | nA | ||||
VEN(hi) | Enable input high level | 1.1 | 5.5 | V | ||||
VEN(lo) | Enable input low level | 0 | 0.4 | V | ||||
VEN(hys) | Enable pin hysteresis | 50 | mV | |||||
VEN(dg) | Enable pin deglitch time | 20 | µs | |||||
IEN | Enable pin current | VEN = 5 V | 0.1 | 1 | µA | |||
VIT | PG trip threshold | VOUT decreasing | 85 | 90 | 94 | %VOUT | ||
VHYS | PG trip hysteresis | 3 | %VOUT | |||||
VPG(lo) | PG output low voltage | IPG = 1 mA (sinking), VOUT < VIT | 0.3 | V | ||||
IPG(lkg) | PG leakage current | VPG = 5.25 V, VOUT > VIT | 0.1 | 1 | µA | |||
TSD | Thermal shutdown temperature | Shutdown, temperature increasing | 165 | ℃ | ||||
Reset, temperature decreasing | 140 |