ZHCSOW4B September   2021  – March 2022 LM74720-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Dual Gate Control (GATE, PD)
        1. 8.3.1.1 Reverse Battery Protection (A, C, GATE)
        2. 8.3.1.2 Load Disconnect Switch Control (PD)
      2. 8.3.2 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      3. 8.3.3 Boost Regulator
    4. 8.4 Device Functional Mode (Shutdown Mode)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12-V Battery Protection
      2. 9.2.2 Automotive Reverse Battery Protection
        1. 9.2.2.1 Input Transient Protection: ISO 7637-2 Pulse 1
        2. 9.2.2.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
        3. 9.2.2.3 Input Micro-Short Protection: LV124 E-10
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Design Considerations
        2. 9.2.3.2 Boost Converter Components (C2, C3, L1)
        3. 9.2.3.3 Input and Output Capacitance
        4. 9.2.3.4 Hold-Up Capacitance
        5. 9.2.3.5 Overvoltage Protection and Battery Monitor
        6. 9.2.3.6 MOSFET Selection: Blocking MOSFET Q1
        7. 9.2.3.7 MOSFET Selection: Load Disconnect MOSFET Q2
        8. 9.2.3.8 TVS Selection
      4. 9.2.4 Application Curves
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 TVS Selection for 12-V Battery Systems
    3. 10.3 TVS Selection for 24-V Battery Systems
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 第三方米6体育平台手机版_好二三四免责声明
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

9.2.3.2 Boost Converter Components (C2, C3, L1)

Place a minimum of a 1-μF capacitor across drain of the FET to GND (C2) and across CAP pin of LM74720- Q1 to drain of the FET (C3). Use a 100-μH inductor (L1) with saturation current rating > 175 mA. Example: XPL2010-104ML from coil craft.
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