ZHCU989 February 2022 LM5149-Q1
数量 | 参考标识符 | 说明 | 器件型号 | 制造商 |
---|---|---|---|---|
2 | C1、C7 | 电容器,陶瓷,0.1μF,100V,X7R,0603,AEC-Q200 | GCJ188R72A104KA01D | Murata(村田) |
1 | C2 | 电容器,陶瓷,1000pF,100V,X7R,0402,AEC-Q200 | GRM155R72A102KA01D | Murata(村田) |
1 | C3 | 电容器,陶瓷,0.47μF,100V,X7R,0805,AEC-Q200 | CGA4J3X7S2A474K125AB | TDK |
3 | C4、C8、C9 | 电容器,陶瓷,0.01μF,100V,X7R,0603,AEC-Q200 | GCM188R72A103KA37J | Murata(村田) |
1 | C6 | 电容器,陶瓷,0.22μF,100V,X7R,0603,AEC-Q200 | HMK107C7224KAHTE | Taiyo Yuden(太阳诱电) |
2 | C10、C11 | 电容器,陶瓷,1μF,100V,X7R,0805,AEC-Q200 | 08051C105K4Z2A | AVX |
1 | C12 | 电容器,铝,100µF,100V,0.33Ω,AEC-Q200 | EMVY101ARA101MKE0S | United Chemi-Con |
5 | C13、C14、C15、C16、C42 | 电容器,陶瓷,4.7μF,100V,X7S,1210,AEC-Q200 | CGA6M3X7S2A475K200AB | TDK |
GCM32DC72A475KE02L | Murata(村田) | |||
6 | C17、C18、C19、C20、C21、C22 | 电容器,陶瓷,0.01μF,100V,X7S,0402,AEC-Q200 | CGA2B3X7S2A103K050BB | TDK |
1 | C23 | 电容器,陶瓷,4.7μF,25V,X7R,0805,AEC-Q200 | CGA4J1X7R1E475K125AC | TDK |
1 | C24 | 电容器,陶瓷,0.1µF,10V,X7R,0402,AEC-Q200 | Std | Std |
1 | C25 | 电容器,陶瓷,4.7μF,10V,X7R,0603 | GRM188Z71A475ME15D | Murata(村田) |
1 | C26 | 电容器,陶瓷,0.47μF,50V,X7R,0805,AEC-Q200 | GCM21BR71H474KA55L | Murata(村田) |
1 | C27 | 电容器,陶瓷,0.1μF,50V,X7R,0402,AEC-Q200 | CGA2B3X7R1H104K050BB | TDK |
4 | C28、C29、C30、C31 | 电容器,陶瓷,22μF,25V,X7R,1210 | GRM32ER71E226KE15L | Murata(村田) |
1 | C32 | 电容器,陶瓷,0.1μF,50V,X7R,0603 | C0603C104K5RAC-TU | KEMET(基美) |
1 | C34 | 电容器,陶瓷,33pF,50V,C0G/NP0,0402,AEC-Q200 | GCM1555C1H330JA16D | Murata(村田) |
1 | C35 | 电容器,陶瓷,100pF,50V,C0G/NP0,0402,AEC-Q200 | CGA2B2C0G1H101J050BA | TDK |
1 | C37 | 电容器,陶瓷,6800pF,50V,X7R,0402 | GCM155R71H682KA55D | Murata(村田) |
2 | J1、J3 | 端子块,2 针位,5mm,TH | Std | Std |
1 | J2 | 接头,100mil,13 × 1,Au,TH | Std | Std |
1 | L1 | 电感器,1μH,8.2mΩ(典型值),6.3A,4mm × 4mm × 2.1mm(典型值),AEC-Q200 | XGL4020-102MEB | Coilcraft(线艺) |
1 | L2 | 共模扼流圈,700Ω(在 100MHz 时),4A,15mΩ,7.0mm × 6.0mm × 3.8mm(典型值),AEC-Q200 | CM7060P701R-10 | Laird(莱尔德) |
1 | L3 | 电感器,6.8μH,12mΩ,13.3A,10.85mm × 10mm × 5.2mm(典型值),AEC-Q200 | VCHA105D-6R8MS6 | Cyntec(乾坤科技) |
电感器,6.8μH,13.3mΩ,21.4A,10.5mm × 10mm × 6.5mm(典型值),AEC-Q200 | SPM10065VT-6R8M-D | TDK | ||
1 | Q1 | MOSFET,N 沟道,80V,19.5mΩ,12nC,SON 5 × 6,AEC-Q101 | NVMFS6H858NLT1G | Onsemi(安森美) |
1 | Q2 | MOSFET,N 沟道,80V,8.8mΩ,25nC,SON 5 × 6,AEC-Q101 | NVMFS6H848NLT1G | Onsemi(安森美) |
1 | R1 | 电阻器,贴片,15Ω,1/16W,1%,0402 | Std | Std |
1 | R2 | 电阻器,贴片,0.47Ω,1/10W,5%,0603 | Std | Std |
1 | R3 | 电阻器,贴片,0Ω,1/8W,1%,0805 | Std | Std |
1 | R4 | 电阻器,贴片,1kΩ,1/16W,1%,0402 | Std | Std |
1 | R5 | 电阻器,贴片,49.9kΩ,1/16W,1%,0402 | Std | Std |
1 | R6 | 电阻器,贴片,3.32Ω,1/16W,1%,0402 | Std | Std |
1 | R7 | 电阻器,贴片,100kΩ,1/10W,1%,0603 | Std | Std |
1 | R8 | 电阻器,贴片,22.1kΩ,1/16W,1%,0402 | Std | Std |
1 | R9 | 电阻器,贴片,0Ω,1/5W,1%,0402 | Std | Std |
1 | R11 | 电阻器,贴片,5mΩ,1W,1%,0508,AEC-Q200 | KRL2012E-M-R005-F-T5 | Susumu(进工业) |
2 | R12、R20 | 电阻器,贴片,100kΩ,1/16W,1%,0402 | Std | Std |
1 | R13 | 电阻器,贴片,56.2kΩ,1/16W,1%,0402 | Std | Std |
2 | R16、R17 | 电阻器,贴片,49.9Ω,1/16W,1%,0402 | Std | Std |
1 | R18 | 电阻器,贴片,4.75kΩ,1/16W,1%,0402 | Std | Std |
1 | R19 | 电阻器,贴片,41.2kΩ,1/16W,1%,0402 | Std | Std |
1 | R22 | 电阻器,贴片,7.15kΩ,1/16W,1%,0402 | Std | Std |
4 | TP1、TP2、TP3、TP4 | 测试点,微型,SMT | 5019 | Keystone |
1 | U1 | IC,LM5149-Q1,80V 同步降压控制器,VQFN-24 | LM5149QRGYRQ1 | TI |
1 | PCB1 | PCB,FR4,6 层,2oz,83mm x 43mm | PCB | – |