米6体育平台手机版_好二三四详情

Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Control mode PWM Control interface SPI Features Current sense Amplifier, Current sense output, Open-Load Detection Rating Automotive Operating temperature range (°C) -40 to 125
Vs (min) (V) 4.5 Vs ABS (max) (V) 40 Control mode PWM Control interface SPI Features Current sense Amplifier, Current sense output, Open-Load Detection Rating Automotive Operating temperature range (°C) -40 to 125
VQFN (RGZ) 48 49 mm² 7 x 7
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • 4.5V to 35V (40V abs. max) operating range
  • H-bridge or dual-channel half-bridge gate drivers
    • Smart gate drive architecture
    • Tripler charge pump for 100% PWM
    • Wide common mode current shunt amplifier
  • 1 Integrated Half-bridge with IOUT Max 8A (RDSON = 132mΩ, 66mΩ per FET)
  • 1 Integrated Half-bridge with IOUT Max 7A (RDSON = 160mΩ, 80mΩ per FET)
  • 2 Integrated Half-bridges with IOUT Max 4A (RDSON = 400mΩ, 200mΩ per FET)
  • 2 Integrated Half-bridges with IOUT Max 1.3A load (RDSON = 1500mΩ, 750mΩ per FET)
  • 1 Configurable Integrated High-side driver as Lamp or LED driver with IOUT Max 1.5/0.5A (RDSON = 0.4/1.5Ω)
  • 5 Integrated High-side drivers for 0.5/0.25A load (RDSON = 1.5Ω)
    • 1 High-side driver to supply electro chromic (EC) glass MOSFET
  • 1 external MOSFET gate driver for charge of electro chromic glass
  • 1 integrated Low-side FET for discharge of electro chromic glass
  • Internal 10bit PWM generator for high-side drivers
  • All high-side drivers support a low- or high- current threshold constant current mode to drive a wide range of LED modules
  • 1 external MOSFET gate driver for heater
    • Offline open load detection
    • VDS monitoring of low RDSON MOSFET for short circuit detection
  • Integrated driver output features Current regulation (ITRIP)
  • Muxable sense output (IPROPI)
    • Internal current sensing with proportional current output (IPROPI)
    • Advanced die temperature monitoring with multiple thermal clusters
    • Scaled supply voltage output
  • Protection and diagnostic features with configurable fault behavior
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Over current and over temperature protection
  • Device Comparison Table
  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • 4.5V to 35V (40V abs. max) operating range
  • H-bridge or dual-channel half-bridge gate drivers
    • Smart gate drive architecture
    • Tripler charge pump for 100% PWM
    • Wide common mode current shunt amplifier
  • 1 Integrated Half-bridge with IOUT Max 8A (RDSON = 132mΩ, 66mΩ per FET)
  • 1 Integrated Half-bridge with IOUT Max 7A (RDSON = 160mΩ, 80mΩ per FET)
  • 2 Integrated Half-bridges with IOUT Max 4A (RDSON = 400mΩ, 200mΩ per FET)
  • 2 Integrated Half-bridges with IOUT Max 1.3A load (RDSON = 1500mΩ, 750mΩ per FET)
  • 1 Configurable Integrated High-side driver as Lamp or LED driver with IOUT Max 1.5/0.5A (RDSON = 0.4/1.5Ω)
  • 5 Integrated High-side drivers for 0.5/0.25A load (RDSON = 1.5Ω)
    • 1 High-side driver to supply electro chromic (EC) glass MOSFET
  • 1 external MOSFET gate driver for charge of electro chromic glass
  • 1 integrated Low-side FET for discharge of electro chromic glass
  • Internal 10bit PWM generator for high-side drivers
  • All high-side drivers support a low- or high- current threshold constant current mode to drive a wide range of LED modules
  • 1 external MOSFET gate driver for heater
    • Offline open load detection
    • VDS monitoring of low RDSON MOSFET for short circuit detection
  • Integrated driver output features Current regulation (ITRIP)
  • Muxable sense output (IPROPI)
    • Internal current sensing with proportional current output (IPROPI)
    • Advanced die temperature monitoring with multiple thermal clusters
    • Scaled supply voltage output
  • Protection and diagnostic features with configurable fault behavior
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Over current and over temperature protection
  • Device Comparison Table

The DRV8000-Q1 device integrates multiple types of drivers intended for multiple functions: driving and diagnosing motor (inductive), resistive and capacitive loads. The device features two half-bridge gate drivers, 6 integrated half-bridges, 6 integrated high-side drivers, one external high-side gate driver for heater, one external high-side gate driver for electrochromic charge and one integrated low-side driver for electrochromic load discharge. Each individual driver has PWM input control options, sensing and diagnostics, along with device system protection and diagnostics. There are also dedicated programmable PWM generators for each high-side driver. Proportional current sense pin output is available for all integrated drivers, along with a robust and flexible current shunt amplifier for the gate driver.

The high-side and low-side drivers can be used to drive MOSFETs for special loads such as heating element or electro-chromic elements. These drivers include offline and active diagnostics.

The device provides protection features such as under and over voltage monitors, offline open load and short circuit diagnostics, and zone-based thermal monitoring and shutdown protection.

The DRV8000-Q1 device integrates multiple types of drivers intended for multiple functions: driving and diagnosing motor (inductive), resistive and capacitive loads. The device features two half-bridge gate drivers, 6 integrated half-bridges, 6 integrated high-side drivers, one external high-side gate driver for heater, one external high-side gate driver for electrochromic charge and one integrated low-side driver for electrochromic load discharge. Each individual driver has PWM input control options, sensing and diagnostics, along with device system protection and diagnostics. There are also dedicated programmable PWM generators for each high-side driver. Proportional current sense pin output is available for all integrated drivers, along with a robust and flexible current shunt amplifier for the gate driver.

The high-side and low-side drivers can be used to drive MOSFETs for special loads such as heating element or electro-chromic elements. These drivers include offline and active diagnostics.

The device provides protection features such as under and over voltage monitors, offline open load and short circuit diagnostics, and zone-based thermal monitoring and shutdown protection.

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类型 标题 下载最新的英语版本 日期
* 数据表 DRV8000-Q1 Automotive Highly-integrated, Multi-function Driver for Door Control 数据表 PDF | HTML 2024年 5月 29日
应用手册 所选封装材料的热学和电学性质 2008年 10月 16日

设计和开发

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评估板

DRV8000-Q1EVM — DRV80000-Q1 评估模块

DRV8000-Q1 评估模块 (EVM) 可轻松评估 DRV8000-Q1 器件。该 EVM 已编程并配置为开箱即用,可立即开始驱动负载。此 EVM 展示了一个集成驱动器,包括一个半桥栅极驱动器、六个集成半桥、六个集成高侧驱动器、一个用于加热器的外部高侧栅极驱动器、一个用于电致变色充电的外部高侧栅极驱动器和一个用于电致变色负载放电的集成低侧驱动器。该器件具有多项保护功能,例如欠压和过压监控、离线开路负载和短路诊断以及基于区域的热监控和关断保护。该器件还具有可多路复用的检测输出 (IPROPI) 并集成了电流调节 (ITRIP)。该 EVM 附带 GUI 应用程序,用于轻松控制电机驱动器。

用户指南: PDF | HTML
英语版: PDF | HTML
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封装 引脚 CAD 符号、封装和 3D 模型
VQFN (RGZ) 48 Ultra Librarian

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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