米6体育平台手机版_好二三四详情

Technology family ABT Operating temperature range (°C) -55 to 125 Rating Military
Technology family ABT Operating temperature range (°C) -55 to 125 Rating Military
CDIP (J) 20 167.464 mm² 24.2 x 6.92 CFP (W) 20 90.5828 mm² 13.09 x 6.92 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

  • Typical VOLP (Output Ground Bounce)
       <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (–32-mA IOH, 64-mA IOL)
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

These 8-bit flip-flops feature 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The eight flip-flops of the SN54ABT574 and SN74ABT574A are edge-triggered D-type flip-flops. On the positive transition of the clock (CLK) input, the Q outputs are set to the logic levels set up at the data (D) inputs.

A buffered output-enable (OE)\ input can be used to place the eight outputs in either a normal logic state (high or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE\ does not affect the internal operations of the flip-flops. Old data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

These 8-bit flip-flops feature 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. They are particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

The eight flip-flops of the SN54ABT574 and SN74ABT574A are edge-triggered D-type flip-flops. On the positive transition of the clock (CLK) input, the Q outputs are set to the logic levels set up at the data (D) inputs.

A buffered output-enable (OE)\ input can be used to place the eight outputs in either a normal logic state (high or low logic levels) or the high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE\ does not affect the internal operations of the flip-flops. Old data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

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类型 标题 下载最新的英语版本 日期
* 数据表 SN54ABT574, SN74ABT574A 数据表 (Rev. F) 2003年 9月 9日

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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