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SN74ABT244A-EP

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具有 TTL 兼容型 CMOS 输入和三态输出的品 8 通道、4.5V 至 5.5V 缓冲器（增强型米6体育平台手机版_好二三四）

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SN74ABT244A-EP

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米6体育平台手机版_好二三四详情

Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 48 Supply current (max) (µA) 30000 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 48 Supply current (max) (µA) 30000 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Ultra high speed (tpd <5ns) Rating HiRel Enhanced Product Operating temperature range (°C) -55 to 125
SSOP (DB) 20 56.16 mm² 7.2 x 7.8
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Typical VOLP (Output Ground Bounce) <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (-24-mA IOH, 48-mA IOL)
  • Packaged in Shrink Small-Outline (DB) Package

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

EPIC-IIB is a trademark of Texas Intruments.
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of -55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Typical VOLP (Output Ground Bounce) <1 V at VCC = 5 V, TA = 25°C
  • High-Drive Outputs (-24-mA IOH, 48-mA IOL)
  • Packaged in Shrink Small-Outline (DB) Package

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

EPIC-IIB is a trademark of Texas Intruments.

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. Together with the SN54ABT240, SN74ABT240A, SN54ABT241, and SN74ABT241A, these devices provide the choice of selected combinations of inverting and noninverting outputs, symmetrical active-low output-enable (OE) inputs, and complementary OE and OE inputs.

The SN74ABT244A is organized as two 4-bit buffers/line drivers with separate OE inputs. When OE is low, the device passes noninverted data from the A inputs to the Y outputs. When OE is high, the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74ABT244 is characterized for operation over the full military temperature range of -55°C to 125°C.

This octal buffer and line driver is designed specifically to improve both the performance and density of 3-state memory address drivers, clock drivers, and bus-oriented receivers and transmitters. Together with the SN54ABT240, SN74ABT240A, SN54ABT241, and SN74ABT241A, these devices provide the choice of selected combinations of inverting and noninverting outputs, symmetrical active-low output-enable (OE) inputs, and complementary OE and OE inputs.

The SN74ABT244A is organized as two 4-bit buffers/line drivers with separate OE inputs. When OE is low, the device passes noninverted data from the A inputs to the Y outputs. When OE is high, the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74ABT244 is characterized for operation over the full military temperature range of -55°C to 125°C.

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类型 标题 下载最新的英语版本 日期
* 数据表 SN74ABT244A-EP 数据表 (Rev. A) 2006年 7月 14日
* VID SN74ABT244A-EP VID V6206667 2016年 6月 21日
应用手册 Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
选择指南 《高级总线接口逻辑器件选择指南》 英语版 2010年 7月 7日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
应用手册 选择正确的电平转换解决方案 (Rev. A) 英语版 (Rev.A) 2006年 3月 23日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
应用手册 Quad Flatpack No-Lead Logic Packages (Rev. D) 2004年 2月 16日
应用手册 TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
应用手册 Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 2002年 5月 10日
应用手册 Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997年 6月 1日
应用手册 使用逻辑器件进行设计 (Rev. C) 1997年 6月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997年 3月 1日
应用手册 Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 1996年 12月 1日
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SSOP (DB) 20 Ultra Librarian
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包含信息：
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  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
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  • 持续可靠性监测
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  • 封装厂地点

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