米6体育平台手机版_好二三四详情

Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 ON-state leakage current (max) (µA) 5 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Precharged signal path, Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 1:1 SPST Number of channels 10 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 ON-state leakage current (max) (µA) 5 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Precharged signal path, Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
SSOP (DBQ) 24 51.9 mm² 8.65 x 6 TSSOP (PW) 24 49.92 mm² 7.8 x 6.4
  • 5- Switch Connection Between Two Ports
  • TTL-Compatible Input Levels
  • Power Off Disables Outputs, Permitting Live Insertion
  • Outputs Are Precharged by Bias Voltage to Minimize Signal Distortion During Live Insertion
  • Active-Clamp Undershoot-Protection Circuit on the I/Os Clamps Undershoots Down to \x962 V
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)
  • 5- Switch Connection Between Two Ports
  • TTL-Compatible Input Levels
  • Power Off Disables Outputs, Permitting Live Insertion
  • Outputs Are Precharged by Bias Voltage to Minimize Signal Distortion During Live Insertion
  • Active-Clamp Undershoot-Protection Circuit on the I/Os Clamps Undershoots Down to \x962 V
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

The SN74CBTK6800 device provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows bidirectional connections to be made while adding near-zero propagation delay. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.

The A and B ports have an active-clamp undershoot-protection circuit. When there is an undershoot, the active-clamp circuit is enabled and current from VCC is supplied to clamp the output, preventing the pass transistor from turning on.

The SN74CBTK6800 is organized as one 10-bit switch with a single enable (ON\) input. When ON\ is low, the switch is on, and port A is connected to port B. When ON\ is high, the switch between port A and port B is open. When ON\ is high or VCC is 0 V, B port is precharged to BIASV through the equivalent of a 10-k resistor.

The SN74CBTK6800 device provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows bidirectional connections to be made while adding near-zero propagation delay. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.

The A and B ports have an active-clamp undershoot-protection circuit. When there is an undershoot, the active-clamp circuit is enabled and current from VCC is supplied to clamp the output, preventing the pass transistor from turning on.

The SN74CBTK6800 is organized as one 10-bit switch with a single enable (ON\) input. When ON\ is low, the switch is on, and port A is connected to port B. When ON\ is high, the switch between port A and port B is open. When ON\ is high or VCC is 0 V, B port is precharged to BIASV through the equivalent of a 10-k resistor.

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SN74CBT6800C 正在供货 具有 –2V 下冲保护的 5V、1:1 (SPST)、10 通道通用 FET 总线开关 –2-V undershoot protection

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类型 标题 下载最新的英语版本 日期
* 数据表 10-Bit FET Bus Switch W/ Precharged Outputs and Active-Clamp Undershoot-Prot.Ckt 数据表 (Rev. B) 2000年 10月 20日

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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