SN74LVC2G00W-EP
- Controlled Baseline
- One Assembly/Test Site, One Fabrication Site
- Extended Temperature Performance of -55°C to 115°C
- Enhanced Diminishing Manufacturing Sources (DMS) Support
- Enhanced Product-Change Notification
- Qualification Pedigree(1)
- Supports 5-V VCC Operation
- Inputs Accept Voltages to 5.5 V
- Max tpd of 5.3 ns at 3.3 V
- Low Power Consumption, 10-µA Max ICC
- ±24-mA Output Drive at 3.3 V
- Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C
- Typical VOHV (Output VOH Undershoot) >2 V at VCC = 3.3 V, TA = 25°C
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Protection Exceeds JESD 22
- 2000-V Human-Body Model (A114-A)
- 1000-V Charged-Device Model (C101)
Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified
performance and environmental limits.
This dual 2-input positive-NAND gate is designed for 1.65-V to 5.5-V VCC operation.
The SN74LVC2G00W-EP performs the Boolean function Y = A • B or Y = A + B in positive logic.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
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设计和开发
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封装 | 引脚 | CAD 符号、封装和 3D 模型 |
---|---|---|
SSOP (DCT) | 8 | Ultra Librarian |
订购和质量
- RoHS
- REACH
- 器件标识
- 引脚镀层/焊球材料
- MSL 等级/回流焊峰值温度
- MTBF/时基故障估算
- 材料成分
- 鉴定摘要
- 持续可靠性监测
- 制造厂地点
- 封装厂地点