1 Features

AEC-Q100 qualified for automotive applications:
- Device ambient temperature grade 0: –40°C to +150°C
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4B
Functional Safety-Compliant targeted
- Developed for functional safety applications
- Documentation to aid ISO 26262 system design will be available upon production release
- Systematic capability up to ASIL D targeted
Three N-Channel half-bridge gate driver
- 2-A/2.5-A max peak gate drive current
- Power architecture optimized for 48-V applications
- 12-V/48-V split supply architecture
- 95-V transient absolute maximum rating of DC link power supply (DHCP)
- 105-V Bootstrap voltage to support 90-V MOSFET operating voltage range
- Bootstrap with charge pump for 100% duty cycle
Integrated 1x (DRV3256A-Q1) or 3x (DRV3256-Q1) current shunt amplifiers
Integrated configurable Active Short Circuit (ASC) function
- Low-side (DRV3256A-Q1) or Low-side and High-side (DRV3256-Q1/DRV3256B-Q1) ASC support
- Low-side and High-side ASC support
- Device pin control available
- Fault handling capability
Serial peripheral interface (SPI) with CRC
Supports 3.3-V and 5-V logic inputs
Advanced protection features
- Battery voltage monitors
- MOSFET V_DS overcurrent monitors
- R_shunt overcurrent monitors
- MOSFET V_GS gate fault monitors
- Analog built in self test
- Internal regulator and clock monitors
- Device thermal warning and shutdown
- Fault condition indicator pins