SBOS792A August   2017  – January 2018 INA828

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      INA828 Simplified Internal Schematic
      2.      Typical Distribution of Input Offset Voltage Drift
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Setting the Gain
        1. 7.3.1.1 Gain Drift
      2. 7.3.2 EMI Rejection
        1. Table 2. INA828 EMIRR for Frequencies of Interest
      3. 7.3.3 Input Common-Mode Range
      4. 7.3.4 Input Protection
      5. 7.3.5 Operating Voltage
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Reference Terminal
    2. 8.2 Input Bias Current Return Path
    3. 8.3 PCB Assembly Effects on Precision
    4. 8.4 Typical Application
      1. 8.4.1 Design Requirements
      2. 8.4.2 Detailed Design Procedure
      3. 8.4.3 Application Curves
    5. 8.5 Other Application Examples
      1. 8.5.1 Resistance Temperature Detector Interface
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Precision Instrumentation Amplifier Evolution:
    • Second Generation: INA828
    • First Generation: INA128
  • Low Offset Voltage: 50 µV, MAX
  • Gain Drift: 5 ppm/°C (G = 1), 50 ppm/°C (G > 1)
  • Noise: 7 nV/√Hz
  • Bandwidth: 2 MHz (G = 1), 260 kHz (G = 100)
  • Stable with 1-nF Capacitive Loads
  • Inputs Protected Up to ±40 V
  • Common-Mode Rejection:
    • 110 dB, MIN (G = 10)
  • Power-Supply Rejection: 100 dB, MIN (G = 1)
  • Supply Current: 650 µA, MAX
  • Supply Range:
    • Single Supply: 4.5 V to 36 V
    • Dual Supply: ±2.25 V to ±18 V
  • Specified Temperature Range:
    –40°C to +125°C
  • Package: 8-Pin SOIC
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