SNOSD10F
April 2016 – May 2020
LMG3410R070
,
LMG3411R070
PRODUCTION DATA.
1
Features
2
Applications
3
Description
Device Images
Simplified Block Diagram
Switching Performance at >100 V/ns
4
Revision History
5
Pin Configuration and Functions
Pin Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Typical Characteristics
7
Parameter Measurement Information
7.1
Switching Parameters
7.1.1
Turn-on Delays
7.1.2
Turn-off Delays
7.1.3
Drain Slew Rate
7.1.4
Turn-on and Turn-off Energy
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Direct-Drive GaN Architecture
8.3.2
Internal Buck-Boost DC-DC Converter
8.3.3
Internal Auxiliary LDO
8.3.4
Fault Detection
8.3.4.1
Over-current Protection
8.3.4.2
Over-Temperature Protection and UVLO
8.3.5
Drive Strength Adjustment
8.4
Device Functional Modes
8.4.1
Low-Power Mode
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.2.1
Slew Rate Selection
9.2.2.1.1
Startup and Slew Rate with Bootstrap High-Side Supply
9.2.2.2
Signal Level-Shifting
9.2.2.3
Buck-Boost Converter Design
9.2.3
Application Curves
9.3
Paralleling GaN Devices
9.4
Do's and Don'ts
10
Power Supply Recommendations
10.1
Using an Isolated Power Supply
10.2
Using a Bootstrap Diode
10.2.1
Diode Selection
10.2.2
Managing the Bootstrap Voltage
10.2.3
Reliable Bootstrap Start-up
11
Layout
11.1
Layout Guidelines
11.1.1
Power Loop Inductance
11.1.2
Signal Ground Connection
11.1.3
Bypass Capacitors
11.1.4
Switch-Node Capacitance
11.1.5
Signal Integrity
11.1.6
High-Voltage Spacing
11.1.7
Thermal Recommendations
11.2
Layout Example
12
Device and Documentation Support
12.1
Device Support
12.1.1
Third-Party Products Disclaimer
12.2
Documentation Support
12.2.1
Related Documentation
12.3
Receiving Notification of Documentation Updates
12.4
Community Resources
12.5
Trademarks
12.6
Electrostatic Discharge Caution
12.7
Glossary
13
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
RWH|32
MPQF424C
Thermal pad, mechanical data (Package|Pins)
Orderable Information
snosd10f_oa
snosd10f_pm
1
Features
TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
Enables High Density Power Conversion Designs
Superior System Performance Over Cascode or Stand-alone GaN FETs
Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
Adjustable Drive Strength for Switching Performance and EMI Control
Digital Fault Status Output Signal
Only +12 V Unregulated Supply Needed
Integrated Gate Driver
Zero Common Source Inductance
20 ns Propagation Delay for MHz Operation
Process-tuned Gate Bias Voltage for Reliability
25 to 100V/ns User Adjustable Slew Rate
Robust Protection
Requires No External Protection Components
Over-current Protection with <100ns Response
>150V/ns Slew Rate Immunity
Transient Overvoltage Immunity
Overtemperature Protection
UVLO Protection on All Supply Rails
Device Options
:
LMG3410R070
: Latched Overcurrent Protection
LMG3411R070
: Cycle-by-cycle Overcurrent Protection
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP
|
米乐app下载官网(中国)|ios|Android/通用版APP最新版
|
米乐|米乐·M6(中国大陆)官方网站
|
千亿体育登陆地址
|
华体会体育(中国)HTH·官方网站
|
千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载
|
18新利网v1.2.5|中国官方网站
|
bob电竞真人(中国官网)安卓/ios苹果/电脑版【1.97.95版下载】
|
千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装
|