SLPS224C August 2009 – November 2016 CSD16323Q3
PRODUCTION DATA.
This 25-V, 3.8-mΩ, 3.3 × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5-V gate drive applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 25 | V | |
Qg | Gate Charge Total (4.5 V) | 6.2 | nC | |
Qgd | Gate Charge Gate-to-Drain | 1.1 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 3 V | 5.4 | mΩ |
VGS = 4.5 V | 4.4 | |||
VGS = 8 V | 3.8 | |||
Vth | Threshold Voltage | 1.1 | V |
DEVICE | MEDIA | QTY | PACKAGE | SHIP |
---|---|---|---|---|
CSD16323Q3 | 13-Inch Reel | 2500 | SON 3.30-mm × 3.30-mm Plastic Package |
Tape and Reel |
CSD16323Q3T | 7-Inch Reel | 250 |
TA = 25°C (unless otherwise stated) | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 25 | V |
VGS | Gate-to-Source Voltage | +10 / –8 | V |
ID | Continuous Drain Current (Package Limit) | 60 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C | 105 | ||
Continuous Drain Current(1) | 20 | ||
IDM | Pulsed Drain Current(2) | 240 | A |
PD | Power Dissipation(1) | 2.8 | W |
Power Dissipation, TC = 25°C | 74 | ||
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 150 | °C |
EAS | Avalanche Energy, Single Pulse ID = 50 A, L = 0.1 mH, RG = 25 Ω |
125 | mJ |
RDS(on) vs VGS |
Gate Charge |