CSD18514Q5A 40V N 沟道 NexFET功率金属氧化物半导体场效应晶体管 (MOSFET)

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1 特性

低 R_DS(ON)
低热阻
雪崩额定值
逻辑电平
无铅引脚镀层
符合 RoHS 环保标准
无卤素
小外形尺寸无引线 (SON) 5mm x 6mm 塑料封装

2 应用范围

直流 - 直流转换
次级侧同步整流
电池电机控制

3 说明

这款采用 5mm × 6mm SON 封装的 40V、4.1mΩ、 NexFET™功率 MOSFET 被设计成在功率转换应用中大大降低损耗。

俯视图

米6体育平台手机版_好二三四概要

T_A=25°C		典型值		单位
V_DS	漏源电压	40		V
Q_g	栅极电荷总量 (10V)	29		nC
Q_gd	栅极电荷（栅极到漏极）	5.0		nC
R_DS(on)	漏源导通电阻	V_GS = 4.5V	6.0	mΩ
R_DS(on)	漏源导通电阻	V_GS = 10V	4.1	mΩ
V_GS(th)	阈值电压	1.8		V

器件信息⁽¹⁾

器件	包装介质	数量	封装	运输
CSD18514Q5A	13 英寸卷带	2500	SON 5.00mm × 6.00mm 塑料封装	卷带封装
CSD18514Q5AT	7 英寸卷带	250	SON 5.00mm × 6.00mm 塑料封装	卷带封装

要了解所有可用封装，请见数据表末尾的可订购米6体育平台手机版_好二三四附录。

绝对最大额定值

T_A = 25°C		值	单位
V_DS	漏源电压	40	V
V_GS	栅源电压	±20	V
I_D	持续漏极电流（受封装限制）	50	A
	持续漏极电流（受芯片限制），T_C = 25°C 时测得	89
	持续漏极电流⁽¹⁾	18
I_DM	脉冲漏极电流⁽²⁾	237	A
P_D	功率耗散⁽¹⁾	3.1	W
P_D	功率耗散，T_C = 25°C	74	W
T_J， T_stg	工作结温，储存温度	-55 至 150	°C
E_AS	雪崩能量，单一脉冲 I_D = 33A，L = 0.1mH，R_G = 25Ω	55	mJ

R_θJA = 40°C/W，这是在一块厚度为 0.06 英寸环氧树脂 (FR4) 印刷电路板 (PCB) 上的 1 英寸²，2 盎司铜焊盘上测得的典型值。
最大 R_θJC = 1.7°C/W，脉冲持续时间
≤ 100μs，占空比 ≤ 1%。

R_DS(on) 与 V_GS 间的关系

栅极电荷

4 修订历史记录

Changes from * Revision (November 2016) to A Revision

Changed the charge values in the Dynamic Characteristics section of the Electrical Characteristics tableGo
Changed Figure 4 in the Typical MOSFET Characteristics section to reflect updated gate chargesGo

5 Specifications

5.1 Electrical Characteristics

T_A = 25°C (unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	40			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 32 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.5	1.8	2.4	V
R_DS(on)	Drain-to-source on resistance	V_GS = 4.5 V, I_D = 14 A		6.0	7.9	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10 V, I_D = 14 A		4.1	4.9	mΩ
g_fs	Transconductance	V_DS = 4 V, I_D = 14 A		59		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 20 V, ƒ = 1 MHz		2060	2680	pF
C_oss	Output capacitance			205	267	pF
C_rss	Reverse transfer capacitance			106	138	pF
R_G	Series gate resistance			1.3	2.6	Ω
Q_g	Gate charge total (4.5 V)	V_DS = 20 V, I_D = 14 A		14	18	nC
Q_g	Gate charge total (10 V)			29	38	nC
Q_gd	Gate charge gate-to-drain			5.0		nC
Q_gs	Gate charge gate-to-source			6.0		nC
Q_g(th)	Gate charge at V_th			3.4		nC
Q_oss	Output charge	V_DS = 20 V, V_GS = 0 V		9.2		nC
t_d(on)	Turnon delay time	V_DS = 20 V, V_GS = 10 V, I_DS = 14 A, R_G = 0 Ω		13		ns
t_r	Rise time			22		ns
t_d(off)	Turnoff delay time			14		ns
t_f	Fall time			6		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 14 A, V_GS = 0 V		0.8	1.0	V
Q_rr	Reverse recovery charge	V_DS= 20 V, I_F = 14 A, di/dt = 300 A/μs		8.5		nC
t_rr	Reverse recovery time	V_DS= 20 V, I_F = 14 A, di/dt = 300 A/μs		9		ns

5.2 Thermal Information

T_A = 25°C (unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case thermal resistance⁽¹⁾			1.7	°C/W
R_θJA	Junction-to-ambient thermal resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in
(3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-in² (6.45-cm²), 2-oz (0.071-mm) thick Cu.