CSD19505KTT 80V N 沟道 NexFET功率金属氧化物半导体场效应晶体管 (MOSFET)
- ZHCSF04 March 2016 CSD19505KTT
  
  PRODUCTION DATA.

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CSD19505KTT 80V N 沟道 NexFET功率金属氧化物半导体场效应晶体管 (MOSFET)

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1 特性

超低 Q_g 和 Q_gd
低热阻
雪崩级
无铅引脚镀层
符合 RoHS 环保标准
无卤素
D²PAK 塑料封装

2 应用

次级侧同步整流器
电机控制

3 说明

这款 80V、2.6mΩ、D²PAK (TO-263) NexFET™功率 MOSFET 被设计成在功率转换应用中大大降低损耗。

空白

米6体育平台手机版_好二三四概要

T_A=25°C		典型值		单位
V_DS	漏源电压	80		V
Q_g	栅极电荷总量 (10V)	76		nC
Q_gd	栅极电荷栅极到漏极	11		nC
R_DS(on)	漏源导通电阻	V_GS = 6V	2.9	mΩ
R_DS(on)	漏源导通电阻	V_GS = 10V	2.6	mΩ
V_GS(th)	阈值电压	2.6		V

器件信息⁽¹⁾

器件	数量	包装介质	封装	运输
CSD19505KTT	500	13 英寸卷带	D²PAK 塑料封装	卷带封装
CSD19505KTTT	50	13 英寸卷带	D²PAK 塑料封装	卷带封装

要了解所有可用封装，请见数据表末尾的可订购米6体育平台手机版_好二三四附录。

绝对最大额定值

T_A = 25°C		值	单位
V_DS	漏源电压	80	V
V_GS	栅源电压	±20	V
I_D	持续漏极电流（受封装限制）	200	A
	持续漏极电流（受芯片限制），T_C = 25°C 时测得	212	A
	持续漏极电流（受芯片限制），T_C = 100°C 时测得	150	A
I_DM	脉冲漏极电流⁽¹⁾	400	A
P_D	功率耗散	300	W
T_J， T_stg	工作结温，储存温度	-55 至 175	°C
E_AS	雪崩能量，单一脉冲 I_D = 101A，L = 0.1mH，R_G = 25Ω	510	mJ

最大 R_θJC = 0.5°C/W，脉冲持续时间 ≤ 100μs，占空比 ≤ 1%。

R_DS(on) 与 V_GS 间的关系

栅极电荷

4 修订历史记录

日期	修订版本	注释
2016 年 3 月	*	最初发布。

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	80			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 64 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	2.2	2.6	3.2	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 6 V, I_D = 100 A		2.9	3.8	mΩ
R_DS(on)	Drain-to-source on-resistance	V_GS = 10 V, I_D = 100 A		2.6	3.1	mΩ
g_fs	Transconductance	V_DS = 8 V, I_D = 100 A		262		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 40 V, ƒ = 1 MHz		6090	7920	pF
C_oss	Output capacitance			1600	2080	pF
C_rss	Reverse transfer capacitance			26	34	pF
R_G	Series gate resistance			1.4	2.8	Ω
Q_g	Gate charge total (10 V)	V_DS = 40 V, I_D = 100 A		76		nC
Q_gd	Gate charge gate-to-drain			11		nC
Q_gs	Gate charge gate-to-source			25		nC
Q_g(th)	Gate charge at V_th			15		nC
Q_oss	Output charge	V_DS = 40 V, V_GS = 0 V		214		nC
t_d(on)	Turn on delay time	V_DS = 40 V, V_GS = 10 V, I_DS = 100 A, R_G = 0 Ω		11		ns
t_r	Rise time			5		ns
t_d(off)	Turn off delay time			22		ns
t_f	Fall time			3		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 100 A, V_GS = 0 V		0.9	1.1	V
Q_rr	Reverse recovery charge	V_DS= 40 V, I_F = 100 A, di/dt = 300 A/μs		400		nC
t_rr	Reverse recovery time	V_DS= 40 V, I_F = 100 A, di/dt = 300 A/μs		88		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-case thermal resistance			0.5	°C/W
R_θJA	Junction-to-ambient thermal resistance			62	°C/W

5.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	V_DS = 5 V

Figure 3. Transfer Characteristics

	V_DS = 40 V	I_D = 100 A

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 100 A

Figure 8. Normalized On-State Resistance vs Temperature

	Single Pulse, Max R_θJC = 0.5°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching

6 器件和文档支持

6.1 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

TI E2E™ Online Community

TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.

Design Support

TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

6.2 商标

NexFET, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

6.3 静电放电警告

这些装置包含有限的内置 ESD 保护。存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。

6.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.