CSD19534Q5A 100V N 通道 NexFET 功率金属氧化物半导体场效应晶体管 (MOSFET)
- ZHCSCG4 May 2014 CSD19534Q5A
  
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CSD19534Q5A 100V N 通道 NexFET 功率金属氧化物半导体场效应晶体管 (MOSFET)

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1 特性

超低 Q_g 和 Q_gd
低热阻
雪崩额定值
无铅端子镀层
符合 RoHS 环保标准
无卤素
小外形尺寸无引线 (SON) 5mm x 6mm 塑料封装

2 应用范围

初级侧电信应用
电机控制

3 说明

这款 100V，12.6mΩ，SON 5mm x 6mm NexFET™ 功率 MOSFET 被设计成在功率转换应用中最大限度地降低损耗。

顶视图

米6体育平台手机版_好二三四概要

T_A = 25°C		典型值		单位
V_DS	漏源电压	100		V
Q_g	栅极电荷总量 (10V)	17		nC
Q_gd	栅漏栅极电荷	3.2		nC
R_DS(on)	漏源导通电阻	V_GS = 6V	14.1	mΩ
R_DS(on)	漏源导通电阻	V_GS = 10V	12.6	mΩ
V_GS(th)	阀值电压	2.8		V

订购信息⁽¹⁾

器件	介质	数量	封装	出货
CSD19534Q5A	13 英寸卷带	2500	SON 5mm x 6mm 塑料封装	卷带封装
CSD19534Q5AT	7 英寸卷带	250	SON 5mm x 6mm 塑料封装	卷带封装

要了解所有可用封装，请见数据表末尾的可订购米6体育平台手机版_好二三四附录。

最大绝对额定值

T_A = 25°C		值	单位
V_DS	漏源电压	100	V
V_GS	栅源电压	±20	V
I_D	持续漏极电流（受封装限制）	50	A
	持续漏极电流（受芯片限制），T_C = 25°C 时测得	44
	持续漏极电流⁽¹⁾	10
I_DM	脉冲漏极电流⁽²⁾	137	A
P_D	功率耗散⁽¹⁾	3.2	W
P_D	功率耗散，T_C = 25°C	63	W
T_J， T_stg	运行结温和储存温度范围	-55 至 150	°C
E_AS	雪崩能量，单脉冲 I_D = 33A，L = 0.1mH，R_G = 25Ω	55	mJ

R_θJA = 40°C/W，这是在一个厚度 0.06 英寸环氧树脂 (FR4) 印刷电路板 (PCB) 上的 1 英寸²，2 盎司的铜过渡垫片上测得的典型值。
最大 R_θJC = 2.0°C/W，脉冲持续时间 ≤ 100μs，占空比 ≤ 1%

R_DS(on) 与 V_GS 间的关系

栅极电荷

4 修订历史记录

日期	修订版本	注释
2014 年 5 月	*	最初发布。

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	100			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 80 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	2.4	2.8	3.4	V
R_DS(on)	Drain-to-Source On Resistance	V_GS = 6 V, I_D = 10 A		14.1	17.6	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10 V, I_D = 10 A		12.6	15.1	mΩ
g_fs	Transconductance	V_DS = 10 V, I_D = 10 A		47		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 50 V, f = 1 MHz		1290	1680	pF
C_oss	Output Capacitance			257	330	pF
C_rss	Reverse Transfer Capacitance			5.7	7.4	pF
R_G	Series Gate Resistance			1.1	2.2	Ω
Q_g	Gate Charge Total (10 V)	V_DS = 50 V, I_D = 10 A		17	22	nC
Q_gd	Gate Charge Gate to Drain			3.2		nC
Q_gs	Gate Charge Gate to Source			5.1		nC
Q_g(th)	Gate Charge at V_th			3.3		nC
Q_oss	Output Charge	V_DS = 50 V, V_GS = 0 V		44		nC
t_d(on)	Turn On Delay Time	V_DS = 50 V, V_GS = 10 V, I_DS = 10 A, R_G = 0 Ω		9		ns
t_r	Rise Time			14		ns
t_d(off)	Turn Off Delay Time			20		ns
t_f	Fall Time			6		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 10 A, V_GS = 0 V		0.8	1.0	V
Q_rr	Reverse Recovery Charge	V_DS= 50 V, I_F = 10 A, di/dt = 300 A/μs		134		nC
t_rr	Reverse Recovery Time	V_DS= 50 V, I_F = 10 A, di/dt = 300 A/μs		53		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

PARAMETER		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance ⁽¹⁾			2.0	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.

Max R_θJA = 50°C/W when mounted on 1 inch² (6.45 cm²) of 2-oz. (0.071-mm thick) Cu.

Max R_θJA = 115°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = 10 A	V_DS = 50 V

Figure 4. Gate Charge

	I_D = 250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = 10 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse	Max R_θJC = 2.0°C/W

Figure 10. Maximum Safe Operating Area

Figure 12. Maximum Drain Current vs Temperature

	V_DS = 5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Single Pulse Unclamped Inductive Switching

6 器件和文档支持

6.1 Trademarks

NexFET is a trademark of Texas Instruments.

6.2 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

6.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms and definitions.